Abstract
The first qualitative results of the effects of backside surface roughness on the radiative properties of silicon as a function of temperature in the wavelength range of 1-20..mu..m are presented in this study. These measurements have been made utilizing a spectral emissometer operating at near- and mid-IR spectral range. Surface roughness of the silicon wafer has been observed to lead toincreased emissivities.
| Original language | American English |
|---|---|
| Pages | 95-102 |
| Number of pages | 8 |
| State | Published - 1998 |
| Event | Rapid Thermal and Integrated Processing VII: Materials Research Society Symposium - San Francisco, California Duration: 13 Apr 1998 → 15 Apr 1998 |
Conference
| Conference | Rapid Thermal and Integrated Processing VII: Materials Research Society Symposium |
|---|---|
| City | San Francisco, California |
| Period | 13/04/98 → 15/04/98 |
NREL Publication Number
- NREL/CP-520-26135