ITO/InP Solar Cells for Space Application

S. Naseem, T. J. Coutts, H. Aharoni, K. Emery, C. Osterwald

Research output: Contribution to conferencePaperpeer-review

1 Scopus Citations


The authors compare the performance of ITO/InP solar cells in which the ITO was deposited either by RF or ion-beam sputtering. Buried homojunctions were always formed on substrates which had been exposed to a very-low-power RF plasma before deposition of the ITO, whether the latter was performed by RF or ion-beam sputtering. However, true heterojunctions appear to be formed if only ion-beam sputtering is used. The authors have traced the difference to the formation of a type-converted surface layer which occurs in the former but not the latter case. The highest efficiency attained so far is 15. 7%, total area, measured under standardized conditions of temperature, intensity and spectral content.

Original languageAmerican English
Number of pages6
StatePublished - 1985
Externally publishedYes
EventEighteenth IEEE Photovoltaic Specialists Conference-1985 - Las Vegas, Nevada
Duration: 21 Oct 198525 Oct 1985


ConferenceEighteenth IEEE Photovoltaic Specialists Conference-1985
CityLas Vegas, Nevada

Bibliographical note

Work performed by Newcastle upon Tyne Polytechnic, England, Solar Energy Research Institute, Golden, Colorado

NREL Publication Number

  • ACNR/CP-213-7809


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