Abstract
The authors compare the performance of ITO/InP solar cells in which the ITO was deposited either by RF or ion-beam sputtering. Buried homojunctions were always formed on substrates which had been exposed to a very-low-power RF plasma before deposition of the ITO, whether the latter was performed by RF or ion-beam sputtering. However, true heterojunctions appear to be formed if only ion-beam sputtering is used. The authors have traced the difference to the formation of a type-converted surface layer which occurs in the former but not the latter case. The highest efficiency attained so far is 15. 7%, total area, measured under standardized conditions of temperature, intensity and spectral content.
Original language | American English |
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Pages | 332-337 |
Number of pages | 6 |
State | Published - 1985 |
Externally published | Yes |
Event | Eighteenth IEEE Photovoltaic Specialists Conference-1985 - Las Vegas, Nevada Duration: 21 Oct 1985 → 25 Oct 1985 |
Conference
Conference | Eighteenth IEEE Photovoltaic Specialists Conference-1985 |
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City | Las Vegas, Nevada |
Period | 21/10/85 → 25/10/85 |
Bibliographical note
Work performed by Newcastle upon Tyne Polytechnic, England, Solar Energy Research Institute, Golden, ColoradoNREL Publication Number
- ACNR/CP-213-7809