@article{b82825c8088b4bde9e02af5cc7f3388e,
title = "Junction Capacitance Study of an Oxygen Impurity Defect Exhibiting Configuration Relaxation in Amorphous Silicon-Germanium Alloys Deposited by Hot-Wire CVD",
keywords = "absorption, amorphous semiconductors, chemical vapor deposition, defects, dielectric properties, electric modules, germanium, photovoltaics, relaxation, silicon, solar cells",
author = "NREL",
year = "2008",
doi = "10.1016/j.jnoncrysol.2007.10.036",
language = "American English",
volume = "354",
pages = "2126--2130",
journal = "Journal of Non-Crystalline Solids",
issn = "0022-3093",
publisher = "Elsevier B.V.",
number = "19-25",
}