Junction Capacitance Study of an Oxygen Impurity Defect Exhibiting Configuration Relaxation in Amorphous Silicon-Germanium Alloys Deposited by Hot-Wire CVD

    Research output: Contribution to journalArticlepeer-review

    Original languageAmerican English
    Pages (from-to)2126-2130
    Number of pages5
    JournalJournal of Non-Crystalline Solids
    Issue number19-25
    StatePublished - 2008

    NREL Publication Number

    • NREL/JA-520-43474


    • absorption
    • amorphous semiconductors
    • chemical vapor deposition
    • defects
    • dielectric properties
    • electric modules
    • germanium
    • photovoltaics
    • relaxation
    • silicon
    • solar cells

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