Junction Electroluminescence of Cu(In,Ga)Se2 Devices

doi:10.1109/PVSC.1996.564292

Junction Electroluminescence of Cu(In,Ga)Se2 Devices

Research output: Contribution to conference › Paper

Abstract

The electroluminescence of Cu(In,Ga)Se2 polycrystalline solar cells produced at different laboratories by different processes and with different Ga contents has been measured as a function of temperature and wavelength. The total emission intensity was found to have a power-law variation with the diode current with an exponent between 1.2 and 1.9. The external quantum efficiency of theelectroluminescence was estimated to be 10/sup -6/ and 10/sup -7/ at room temperature and modest currents. This increases by up to two orders of magnitude at 70 K. A commercial light emitting diode (LED) was found to have an external quantum efficiency between 10/sup -3/ and 10/sup -4/ at roughly 10/sup 3/ higher current densities. Luminescence spectra were Gaussian. The peak luminescencewavelenth of the solar cells increases upon cooling while the maximum wavelength for the photocurrent generation decreases. The results suggest at least two independent processes for carrier generation and radiative recombination.

Original language	American English
Pages	973-976
Number of pages	4
DOIs	https://doi.org/10.1109/PVSC.1996.564292
State	Published - 1996
Event	Twenty Fifth IEEE Photovoltaic Specialists Conference - Washington, D.C. Duration: 13 May 1996 → 17 May 1996

Conference

Conference	Twenty Fifth IEEE Photovoltaic Specialists Conference
City	Washington, D.C.
Period	13/05/96 → 17/05/96

Bibliographical note

Work performed by the University of Illinois, Urbana, Illinois

NREL Publication Number

NREL/CP-22433

Access to Document

10.1109/PVSC.1996.564292

Cite this

@conference{de608d965772480cbfa824d8d9f7538c,

title = "Junction Electroluminescence of Cu(In,Ga)Se2 Devices",

abstract = "The electroluminescence of Cu(In,Ga)Se2 polycrystalline solar cells produced at different laboratories by different processes and with different Ga contents has been measured as a function of temperature and wavelength. The total emission intensity was found to have a power-law variation with the diode current with an exponent between 1.2 and 1.9. The external quantum efficiency of theelectroluminescence was estimated to be 10/sup -6/ and 10/sup -7/ at room temperature and modest currents. This increases by up to two orders of magnitude at 70 K. A commercial light emitting diode (LED) was found to have an external quantum efficiency between 10/sup -3/ and 10/sup -4/ at roughly 10/sup 3/ higher current densities. Luminescence spectra were Gaussian. The peak luminescencewavelenth of the solar cells increases upon cooling while the maximum wavelength for the photocurrent generation decreases. The results suggest at least two independent processes for carrier generation and radiative recombination.",

author = "NREL",

note = "Work performed by the University of Illinois, Urbana, Illinois; Twenty Fifth IEEE Photovoltaic Specialists Conference ; Conference date: 13-05-1996 Through 17-05-1996",

year = "1996",

doi = "10.1109/PVSC.1996.564292",

language = "American English",

pages = "973--976",

}

TY - CONF

T1 - Junction Electroluminescence of Cu(In,Ga)Se2 Devices

AU - NREL, null

N1 - Work performed by the University of Illinois, Urbana, Illinois

PY - 1996

Y1 - 1996

N2 - The electroluminescence of Cu(In,Ga)Se2 polycrystalline solar cells produced at different laboratories by different processes and with different Ga contents has been measured as a function of temperature and wavelength. The total emission intensity was found to have a power-law variation with the diode current with an exponent between 1.2 and 1.9. The external quantum efficiency of theelectroluminescence was estimated to be 10/sup -6/ and 10/sup -7/ at room temperature and modest currents. This increases by up to two orders of magnitude at 70 K. A commercial light emitting diode (LED) was found to have an external quantum efficiency between 10/sup -3/ and 10/sup -4/ at roughly 10/sup 3/ higher current densities. Luminescence spectra were Gaussian. The peak luminescencewavelenth of the solar cells increases upon cooling while the maximum wavelength for the photocurrent generation decreases. The results suggest at least two independent processes for carrier generation and radiative recombination.

AB - The electroluminescence of Cu(In,Ga)Se2 polycrystalline solar cells produced at different laboratories by different processes and with different Ga contents has been measured as a function of temperature and wavelength. The total emission intensity was found to have a power-law variation with the diode current with an exponent between 1.2 and 1.9. The external quantum efficiency of theelectroluminescence was estimated to be 10/sup -6/ and 10/sup -7/ at room temperature and modest currents. This increases by up to two orders of magnitude at 70 K. A commercial light emitting diode (LED) was found to have an external quantum efficiency between 10/sup -3/ and 10/sup -4/ at roughly 10/sup 3/ higher current densities. Luminescence spectra were Gaussian. The peak luminescencewavelenth of the solar cells increases upon cooling while the maximum wavelength for the photocurrent generation decreases. The results suggest at least two independent processes for carrier generation and radiative recombination.

U2 - 10.1109/PVSC.1996.564292

DO - 10.1109/PVSC.1996.564292

M3 - Paper

SP - 973

EP - 976

T2 - Twenty Fifth IEEE Photovoltaic Specialists Conference

Y2 - 13 May 1996 through 17 May 1996

ER -

Junction Electroluminescence of Cu(In,Ga)Se2 Devices

Abstract

Conference

Bibliographical note

NREL Publication Number

Access to Document

Fingerprint

Cite this