Junction Electroluminescence of Cu(In,Ga)Se2 Devices

    Research output: Contribution to conferencePaper


    The electroluminescence of Cu(In,Ga)Se2 polycrystalline solar cells produced at different laboratories by different processes and with different Ga contents has been measured as a function of temperature and wavelength. The total emission intensity was found to have a power-law variation with the diode current with an exponent between 1.2 and 1.9. The external quantum efficiency of theelectroluminescence was estimated to be 10/sup -6/ and 10/sup -7/ at room temperature and modest currents. This increases by up to two orders of magnitude at 70 K. A commercial light emitting diode (LED) was found to have an external quantum efficiency between 10/sup -3/ and 10/sup -4/ at roughly 10/sup 3/ higher current densities. Luminescence spectra were Gaussian. The peak luminescencewavelenth of the solar cells increases upon cooling while the maximum wavelength for the photocurrent generation decreases. The results suggest at least two independent processes for carrier generation and radiative recombination.
    Original languageAmerican English
    Number of pages4
    StatePublished - 1996
    EventTwenty Fifth IEEE Photovoltaic Specialists Conference - Washington, D.C.
    Duration: 13 May 199617 May 1996


    ConferenceTwenty Fifth IEEE Photovoltaic Specialists Conference
    CityWashington, D.C.

    Bibliographical note

    Work performed by the University of Illinois, Urbana, Illinois

    NREL Publication Number

    • NREL/CP-22433


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