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Junction Electroluminescence of Cu(In,Ga)Se2 Devices
NREL
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Engineering
Emission Intensity
50%
External Quantum Efficiency
100%
Ga Content
50%
Gaussians
50%
High Current Density
50%
Light-Emitting Diode
50%
Luminaires
100%
Photocurrent
50%
Polycrystalline
50%
Radiative Recombination
50%
Room Temperature
50%
Solar Cell
100%
Physics
Electroluminescence
100%
Gaussian Distribution
50%
Light Emitting Diode
50%
Photoelectric Emission
50%
Polycrystalline
50%
Room Temperature
50%
Solar Cell
100%