Junction Formation in CuInSe2 Based Thin Film Devices

Junction Formation in CuInSe2 Based Thin Film Devices

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Abstract

The nature of the interface between CuInSe2 (CIS) and the chemical bath deposited CdS layer has been investigated. We show that heat-treating the absorbers in Cd- or Zn- containing solutions in the presence of ammonium hydroxide sets up a chemical reaction which facilitates an extraction of Cu from the lattice and an in-diffusion of Cd. The characteristics of devices made in this manner suggestthat the reaction generates a thin, n-doped region in the absorber. It is quite possible that the CdS/CuInSe2 device is a buried, shallow junction with a CdS window layer, rather than a heterojunction. We have used these ideas to develop methods for fabricating devices without CdS or Cd. A 14.2% efficiency ZnO/CIGS device was obtained through aqueous treatment in Zn solutions.

Original language	American English
Number of pages	9
State	Published - 1998
Event	NCPV Program Review Meeting - Denver, Colorado Duration: 8 Sep 1998 → 11 Sep 1998

Conference

Conference	NCPV Program Review Meeting
City	Denver, Colorado
Period	8/09/98 → 11/09/98

NREL Publication Number

NREL/CP-520-25712

Access to Document

https://www.nrel.gov/docs/fy99osti/25712.pdf

Cite this

@conference{206871d01bc94068a8a547272a78d603,

title = "Junction Formation in CuInSe2 Based Thin Film Devices",

abstract = "The nature of the interface between CuInSe2 (CIS) and the chemical bath deposited CdS layer has been investigated. We show that heat-treating the absorbers in Cd- or Zn- containing solutions in the presence of ammonium hydroxide sets up a chemical reaction which facilitates an extraction of Cu from the lattice and an in-diffusion of Cd. The characteristics of devices made in this manner suggestthat the reaction generates a thin, n-doped region in the absorber. It is quite possible that the CdS/CuInSe2 device is a buried, shallow junction with a CdS window layer, rather than a heterojunction. We have used these ideas to develop methods for fabricating devices without CdS or Cd. A 14.2% efficiency ZnO/CIGS device was obtained through aqueous treatment in Zn solutions.",

author = "NREL",

year = "1998",

language = "American English",

note = "NCPV Program Review Meeting ; Conference date: 08-09-1998 Through 11-09-1998",

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TY - CONF

T1 - Junction Formation in CuInSe2 Based Thin Film Devices

AU - NREL, null

PY - 1998

Y1 - 1998

N2 - The nature of the interface between CuInSe2 (CIS) and the chemical bath deposited CdS layer has been investigated. We show that heat-treating the absorbers in Cd- or Zn- containing solutions in the presence of ammonium hydroxide sets up a chemical reaction which facilitates an extraction of Cu from the lattice and an in-diffusion of Cd. The characteristics of devices made in this manner suggestthat the reaction generates a thin, n-doped region in the absorber. It is quite possible that the CdS/CuInSe2 device is a buried, shallow junction with a CdS window layer, rather than a heterojunction. We have used these ideas to develop methods for fabricating devices without CdS or Cd. A 14.2% efficiency ZnO/CIGS device was obtained through aqueous treatment in Zn solutions.

AB - The nature of the interface between CuInSe2 (CIS) and the chemical bath deposited CdS layer has been investigated. We show that heat-treating the absorbers in Cd- or Zn- containing solutions in the presence of ammonium hydroxide sets up a chemical reaction which facilitates an extraction of Cu from the lattice and an in-diffusion of Cd. The characteristics of devices made in this manner suggestthat the reaction generates a thin, n-doped region in the absorber. It is quite possible that the CdS/CuInSe2 device is a buried, shallow junction with a CdS window layer, rather than a heterojunction. We have used these ideas to develop methods for fabricating devices without CdS or Cd. A 14.2% efficiency ZnO/CIGS device was obtained through aqueous treatment in Zn solutions.

M3 - Paper

T2 - NCPV Program Review Meeting

Y2 - 8 September 1998 through 11 September 1998

ER -

Junction Formation in CuInSe2 Based Thin Film Devices

Abstract

Conference

NREL Publication Number

Access to Document

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Cite this