Junction Formation in CuInSe2 Based Thin Film Devices

Research output: Contribution to conferencePaper

Abstract

The nature of the interface between CuInSe2 (CIS) and the chemical bath deposited CdS layer has been investigated. We show that heat-treating the absorbers in Cd- or Zn- containing solutions in the presence of ammonium hydroxide sets up a chemical reaction which facilitates an extraction of Cu from the lattice and an in-diffusion of Cd. The characteristics of devices made in this manner suggestthat the reaction generates a thin, n-doped region in the absorber. It is quite possible that the CdS/CuInSe2 device is a buried, shallow junction with a CdS window layer, rather than a heterojunction. We have used these ideas to develop methods for fabricating devices without CdS or Cd. A 14.2% efficiency ZnO/CIGS device was obtained through aqueous treatment in Zn solutions.
Original languageAmerican English
Number of pages9
StatePublished - 1998
EventNCPV Program Review Meeting - Denver, Colorado
Duration: 8 Sep 199811 Sep 1998

Conference

ConferenceNCPV Program Review Meeting
CityDenver, Colorado
Period8/09/9811/09/98

NREL Publication Number

  • NREL/CP-520-25712

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