Junction Formation in GaAs Shallow-Homojunction Solar Cells by the Use of Spin-On Diffusion Sources

Junction Formation in GaAs Shallow-Homojunction Solar Cells by the Use of Spin-On Diffusion Sources

Research output: Contribution to conference › Paper

Original language	American English
Pages	1153-1156
Number of pages	4
State	Published - 1982
Event	Sixteenth IEEE Photovoltaic Specialists Conference-1982 - San Diego, California Duration: 27 Sep 1982 → 30 Sep 1982

Conference

Conference	Sixteenth IEEE Photovoltaic Specialists Conference-1982
City	San Diego, California
Period	27/09/82 → 30/09/82

Bibliographical note

Work performed by Lincoln Laboratory, Massachusetts Institute of Technology, Lexington, Massachusetts

NREL Publication Number

ACNR/CP-3725

Cite this

@conference{0bbe2af42f664b2ebe9ba77e608c7714,

title = "Junction Formation in GaAs Shallow-Homojunction Solar Cells by the Use of Spin-On Diffusion Sources",

author = "NREL",

note = "Work performed by Lincoln Laboratory, Massachusetts Institute of Technology, Lexington, Massachusetts; Sixteenth IEEE Photovoltaic Specialists Conference-1982 ; Conference date: 27-09-1982 Through 30-09-1982",

year = "1982",

language = "American English",

pages = "1153--1156",

}

TY - CONF

T1 - Junction Formation in GaAs Shallow-Homojunction Solar Cells by the Use of Spin-On Diffusion Sources

AU - NREL, null

N1 - Work performed by Lincoln Laboratory, Massachusetts Institute of Technology, Lexington, Massachusetts

PY - 1982

Y1 - 1982

M3 - Paper

SP - 1153

EP - 1156

T2 - Sixteenth IEEE Photovoltaic Specialists Conference-1982

Y2 - 27 September 1982 through 30 September 1982

ER -