Junction Mechanisms in CdS/CdTe Solar Cells

doi:10.1109/PVSC.1996.564288

Junction Mechanisms in CdS/CdTe Solar Cells

Research output: Contribution to conference › Paper

Abstract

Shockley-Read-Hall (SRH) recombination theory has been used to describe the performance of CdTe solar cells. The recombination center profile dominates performance and is found to vary significantly among devices with nominally the same efficiency. For most devices the profile results in a voltage dependent diode factor rather than a single A,JO pair that can describe performance. The observednarrow range for Voc of 0.83 -0.85 volts for high efficiency devices is attributed to two effects: the containment of the recombination centers between the imrefs and a proposed correlation betweeen Vbi and the recombination center density.

Original language	American English
Pages	957-960
Number of pages	4
DOIs	https://doi.org/10.1109/PVSC.1996.564288
State	Published - 1996
Event	Twenty Fifth IEEE Photovoltaic Specialists Conference - Washington, D.C. Duration: 13 May 1996 → 17 May 1996

Conference

Conference	Twenty Fifth IEEE Photovoltaic Specialists Conference
City	Washington, D.C.
Period	13/05/96 → 17/05/96

Bibliographical note

Work performed by the University of South Florida, Tampa, Florida

NREL Publication Number

NREL/CP-22430

Access to Document

10.1109/PVSC.1996.564288

Cite this

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title = "Junction Mechanisms in CdS/CdTe Solar Cells",

abstract = "Shockley-Read-Hall (SRH) recombination theory has been used to describe the performance of CdTe solar cells. The recombination center profile dominates performance and is found to vary significantly among devices with nominally the same efficiency. For most devices the profile results in a voltage dependent diode factor rather than a single A,JO pair that can describe performance. The observednarrow range for Voc of 0.83 -0.85 volts for high efficiency devices is attributed to two effects: the containment of the recombination centers between the imrefs and a proposed correlation betweeen Vbi and the recombination center density.",

author = "NREL",

note = "Work performed by the University of South Florida, Tampa, Florida; Twenty Fifth IEEE Photovoltaic Specialists Conference ; Conference date: 13-05-1996 Through 17-05-1996",

year = "1996",

doi = "10.1109/PVSC.1996.564288",

language = "American English",

pages = "957--960",

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AU - NREL, null

N1 - Work performed by the University of South Florida, Tampa, Florida

PY - 1996

Y1 - 1996

N2 - Shockley-Read-Hall (SRH) recombination theory has been used to describe the performance of CdTe solar cells. The recombination center profile dominates performance and is found to vary significantly among devices with nominally the same efficiency. For most devices the profile results in a voltage dependent diode factor rather than a single A,JO pair that can describe performance. The observednarrow range for Voc of 0.83 -0.85 volts for high efficiency devices is attributed to two effects: the containment of the recombination centers between the imrefs and a proposed correlation betweeen Vbi and the recombination center density.

AB - Shockley-Read-Hall (SRH) recombination theory has been used to describe the performance of CdTe solar cells. The recombination center profile dominates performance and is found to vary significantly among devices with nominally the same efficiency. For most devices the profile results in a voltage dependent diode factor rather than a single A,JO pair that can describe performance. The observednarrow range for Voc of 0.83 -0.85 volts for high efficiency devices is attributed to two effects: the containment of the recombination centers between the imrefs and a proposed correlation betweeen Vbi and the recombination center density.

U2 - 10.1109/PVSC.1996.564288

DO - 10.1109/PVSC.1996.564288

M3 - Paper

SP - 957

EP - 960

T2 - Twenty Fifth IEEE Photovoltaic Specialists Conference

Y2 - 13 May 1996 through 17 May 1996

ER -

Junction Mechanisms in CdS/CdTe Solar Cells

Abstract

Conference

Bibliographical note

NREL Publication Number

Access to Document

Fingerprint

Cite this