Junction Transport in Epitaxial Film Silicon Heterojunction Solar Cells: Preprint

Research output: Contribution to conferencePaper

Abstract

We report our progress toward low-temperature HWCVD epitaxial film silicon solar cells on inexpensive seed layers, with a focus on the junction transport physics exhibited by our devices. Heterojunctions of i/p hydrogenated amorphous Si (a-Si) on our n-type epitaxial crystal Si on n++ Si wafers show space-charge-region recombination, tunneling or diffusive transport depending on both epitaxial Siquality and the applied forward voltage.
Original languageAmerican English
Number of pages7
StatePublished - 2011
Event37th IEEE Photovoltaic Specialists Conference (PVSC 37) - Seattle, Washington
Duration: 19 Jun 201124 Jun 2011

Conference

Conference37th IEEE Photovoltaic Specialists Conference (PVSC 37)
CitySeattle, Washington
Period19/06/1124/06/11

NREL Publication Number

  • NREL/CP-5200-50712

Keywords

  • epitaxial film silicon
  • junction transport
  • PV
  • Si
  • solar cells

Fingerprint

Dive into the research topics of 'Junction Transport in Epitaxial Film Silicon Heterojunction Solar Cells: Preprint'. Together they form a unique fingerprint.

Cite this