Abstract
We report our progress toward low-temperature HWCVD epitaxial film silicon solar cells on inexpensive seed layers, with a focus on the junction transport physics exhibited by our devices. Heterojunctions of i/p hydrogenated amorphous Si (a-Si) on our n-type epitaxial crystal Si on n++ Si wafers show space-charge-region recombination, tunneling or diffusive transport depending on both epitaxial Siquality and the applied forward voltage.
Original language | American English |
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Number of pages | 7 |
State | Published - 2011 |
Event | 37th IEEE Photovoltaic Specialists Conference (PVSC 37) - Seattle, Washington Duration: 19 Jun 2011 → 24 Jun 2011 |
Conference
Conference | 37th IEEE Photovoltaic Specialists Conference (PVSC 37) |
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City | Seattle, Washington |
Period | 19/06/11 → 24/06/11 |
NREL Publication Number
- NREL/CP-5200-50712
Keywords
- epitaxial film silicon
- junction transport
- PV
- Si
- solar cells