Junction Transport in Epitaxial Film Silicon Heterojunction Solar Cells

David L. Young; Jian V. Li; Charles W. Teplin; Paul Stradins; Howard M. Branz

doi:10.1109/pvsc.2011.6186665

Junction Transport in Epitaxial Film Silicon Heterojunction Solar Cells

David L. Young, Jian V. Li, Charles W. Teplin, Paul Stradins, Howard M. Branz

Chemistry and Nanoscience

National Renewable Energy Laboratory

Research output: Contribution to conference › Paper › peer-review

3 Scopus Citations

Abstract

We report our progress toward low-temperature HWCVD epitaxial film silicon solar cells on inexpensive seed layers, with a focus on the junction transport physics exhibited by our devices. Heterojunctions of i/p hydrogenated amorphous Si (a-Si) on our n-type epitaxial crystal Si on n ⁺⁺ Si wafers show space-charge-region recombination, tunneling or diffusive transport depending on both epitaxial Si quality and the applied forward voltage.

Original language	American English
Pages	3349-3352
Number of pages	4
DOIs	https://doi.org/10.1109/pvsc.2011.6186665 https://doi.org/10.1109/PVSC.2011.6186665
State	Published - 2011
Event	37th IEEE Photovoltaic Specialists Conference, PVSC 2011 - Seattle, WA, United States Duration: 19 Jun 2011 → 24 Jun 2011

Conference

Conference	37th IEEE Photovoltaic Specialists Conference, PVSC 2011
Country/Territory	United States
City	Seattle, WA
Period	19/06/11 → 24/06/11

Bibliographical note

See NREL/CP-5200-50712 for preprint

NREL Publication Number

NREL/CP-5200-55773

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Cite this

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title = "Junction Transport in Epitaxial Film Silicon Heterojunction Solar Cells",

abstract = "We report our progress toward low-temperature HWCVD epitaxial film silicon solar cells on inexpensive seed layers, with a focus on the junction transport physics exhibited by our devices. Heterojunctions of i/p hydrogenated amorphous Si (a-Si) on our n-type epitaxial crystal Si on n ++ Si wafers show space-charge-region recombination, tunneling or diffusive transport depending on both epitaxial Si quality and the applied forward voltage.",

author = "Young, {David L.} and Li, {Jian V.} and Teplin, {Charles W.} and Paul Stradins and Branz, {Howard M.}",

note = "See NREL/CP-5200-50712 for preprint; 37th IEEE Photovoltaic Specialists Conference, PVSC 2011 ; Conference date: 19-06-2011 Through 24-06-2011",

year = "2011",

doi = "10.1109/pvsc.2011.6186665",

language = "American English",

pages = "3349--3352",

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T1 - Junction Transport in Epitaxial Film Silicon Heterojunction Solar Cells

AU - Young, David L.

AU - Li, Jian V.

AU - Teplin, Charles W.

AU - Stradins, Paul

AU - Branz, Howard M.

N1 - See NREL/CP-5200-50712 for preprint

PY - 2011

Y1 - 2011

N2 - We report our progress toward low-temperature HWCVD epitaxial film silicon solar cells on inexpensive seed layers, with a focus on the junction transport physics exhibited by our devices. Heterojunctions of i/p hydrogenated amorphous Si (a-Si) on our n-type epitaxial crystal Si on n ++ Si wafers show space-charge-region recombination, tunneling or diffusive transport depending on both epitaxial Si quality and the applied forward voltage.

AB - We report our progress toward low-temperature HWCVD epitaxial film silicon solar cells on inexpensive seed layers, with a focus on the junction transport physics exhibited by our devices. Heterojunctions of i/p hydrogenated amorphous Si (a-Si) on our n-type epitaxial crystal Si on n ++ Si wafers show space-charge-region recombination, tunneling or diffusive transport depending on both epitaxial Si quality and the applied forward voltage.

UR - http://www.scopus.com/inward/record.url?scp=84861065029&partnerID=8YFLogxK

U2 - 10.1109/pvsc.2011.6186665

DO - 10.1109/pvsc.2011.6186665

M3 - Paper

AN - SCOPUS:84861065029

SP - 3349

EP - 3352

T2 - 37th IEEE Photovoltaic Specialists Conference, PVSC 2011

Y2 - 19 June 2011 through 24 June 2011

ER -

Junction Transport in Epitaxial Film Silicon Heterojunction Solar Cells

Abstract

Conference

Bibliographical note

NREL Publication Number

Access to Document

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