Abstract
Recent years have seen dramatic improvements in the performance of kesterite devices. The existence of devices of comparable performance, made by a number of different techniques, provides some new perspective on what characteristics are likely fundamental to the material. Here, we review progress in kesterite device fabrication, aspects of the film characteristics that have yet to be understood, and challenges in device development that remain for kesterites to contribute significantly to photovoltaic manufacturing. Performance goals, as well as characteristics of mid-gap defect density, free carrier density, surfaces, grain boundaries, grain-to-grain uniformity, and bandgap alloying are discussed.
Original language | American English |
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Article number | 6307808 |
Pages (from-to) | 439-445 |
Number of pages | 7 |
Journal | IEEE Journal of Photovoltaics |
Volume | 3 |
Issue number | 1 |
DOIs | |
State | Published - 2013 |
NREL Publication Number
- NREL/JA-5200-54139
Keywords
- CuZnSnS (CZTS)
- earth
- kesterite
- photovoltaic
- thin film