Kinetics of Light-Induced Defect Formation and Annealing in Hydrogenated Amorphous Silicon Alloyed with Sulfur

Kinetics of Light-Induced Defect Formation and Annealing in Hydrogenated Amorphous Silicon Alloyed with Sulfur

Research output: Contribution to conference › Paper

Original language	American English
Pages	453-458
Number of pages	6
State	Published - 1999
Event	Amorphous and Microcrystalline Silicon Technology 1998: Materials Research Society Symposium - San Francisco, California Duration: 14 Apr 1998 → 17 Apr 1998

Conference

Conference	Amorphous and Microcrystalline Silicon Technology 1998: Materials Research Society Symposium
City	San Francisco, California
Period	14/04/98 → 17/04/98

Bibliographical note

Work performed by University of Utah, Salt Lake City, Utah

NREL Publication Number

NREL/CP-520-27265

Cite this

@conference{c09fa808d3f047cfa2122a82a65e38e4,

title = "Kinetics of Light-Induced Defect Formation and Annealing in Hydrogenated Amorphous Silicon Alloyed with Sulfur",

author = "NREL",

note = "Work performed by University of Utah, Salt Lake City, Utah; Amorphous and Microcrystalline Silicon Technology 1998: Materials Research Society Symposium ; Conference date: 14-04-1998 Through 17-04-1998",

year = "1999",

language = "American English",

pages = "453--458",

}

TY - CONF

T1 - Kinetics of Light-Induced Defect Formation and Annealing in Hydrogenated Amorphous Silicon Alloyed with Sulfur

AU - NREL, null

N1 - Work performed by University of Utah, Salt Lake City, Utah

PY - 1999

Y1 - 1999

M3 - Paper

SP - 453

EP - 458

T2 - Amorphous and Microcrystalline Silicon Technology 1998: Materials Research Society Symposium

Y2 - 14 April 1998 through 17 April 1998

ER -