Abstract
A GaAs solar cell of area 2×4 cm2 was fabricated from a film grown by molecular beam epitaxy (MBE) on a 5.08-cm-diameter GaAs substrate. This is the largest device ever fabricated from MBE material. The cell demonstrated an efficiency of 21.7% under one-sun AM1.5 conditions at 25°C and 18.8% under one-sun AMO conditions at 28°C.
Original language | American English |
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Pages (from-to) | 137-139 |
Number of pages | 3 |
Journal | IEEE Electron Device Letters |
Volume | 12 |
Issue number | 3 |
DOIs | |
State | Published - 1991 |
NREL Publication Number
- ACNR/JA-213-12467