Large-Area, 8-cm2 GaAs Solar Cells Fabricated from MBE Material

Michael R. Melloch; E. S. Harmon; Keith A. Emery

doi:10.1109/55.75736

Large-Area, 8-cm2 GaAs Solar Cells Fabricated from MBE Material

Michael R. Melloch
, E. S. Harmon
, Keith A. Emery

Chemistry and Nanoscience

Purdue University

Research output: Contribution to journal › Article › peer-review

12 Scopus Citations

Abstract

A GaAs solar cell of area 2×4 cm2 was fabricated from a film grown by molecular beam epitaxy (MBE) on a 5.08-cm-diameter GaAs substrate. This is the largest device ever fabricated from MBE material. The cell demonstrated an efficiency of 21.7% under one-sun AM1.5 conditions at 25°C and 18.8% under one-sun AMO conditions at 28°C.

Original language	American English
Pages (from-to)	137-139
Number of pages	3
Journal	IEEE Electron Device Letters
Volume	12
Issue number	3
DOIs	https://doi.org/10.1109/55.75736 https://doi.org/10.1109/55.75736
State	Published - 1991

NLR Publication Number

ACNR/JA-213-12467

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@article{0299f548e2394924a57eebdd92b24bff,

title = "Large-Area, 8-cm2 GaAs Solar Cells Fabricated from MBE Material",

abstract = "A GaAs solar cell of area 2×4 cm2 was fabricated from a film grown by molecular beam epitaxy (MBE) on a 5.08-cm-diameter GaAs substrate. This is the largest device ever fabricated from MBE material. The cell demonstrated an efficiency of 21.7\% under one-sun AM1.5 conditions at 25°C and 18.8\% under one-sun AMO conditions at 28°C.",

author = "Melloch, \{Michael R.\} and Harmon, \{E. S.\} and Emery, \{Keith A.\}",

year = "1991",

doi = "10.1109/55.75736",

language = "American English",

volume = "12",

pages = "137--139",

journal = "IEEE Electron Device Letters",

issn = "0741-3106",

publisher = "Institute of Electrical and Electronics Engineers Inc.",

number = "3",

}

TY - JOUR

T1 - Large-Area, 8-cm2 GaAs Solar Cells Fabricated from MBE Material

AU - Melloch, Michael R.

AU - Harmon, E. S.

AU - Emery, Keith A.

PY - 1991

Y1 - 1991

N2 - A GaAs solar cell of area 2×4 cm2 was fabricated from a film grown by molecular beam epitaxy (MBE) on a 5.08-cm-diameter GaAs substrate. This is the largest device ever fabricated from MBE material. The cell demonstrated an efficiency of 21.7% under one-sun AM1.5 conditions at 25°C and 18.8% under one-sun AMO conditions at 28°C.

AB - A GaAs solar cell of area 2×4 cm2 was fabricated from a film grown by molecular beam epitaxy (MBE) on a 5.08-cm-diameter GaAs substrate. This is the largest device ever fabricated from MBE material. The cell demonstrated an efficiency of 21.7% under one-sun AM1.5 conditions at 25°C and 18.8% under one-sun AMO conditions at 28°C.

UR - https://www.scopus.com/pages/publications/0026117909

U2 - 10.1109/55.75736

DO - 10.1109/55.75736

M3 - Article

AN - SCOPUS:0026117909

SN - 0741-3106

VL - 12

SP - 137

EP - 139

JO - IEEE Electron Device Letters

JF - IEEE Electron Device Letters

IS - 3

ER -

Large-Area, 8-cm2 GaAs Solar Cells Fabricated from MBE Material

Abstract

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