Abstract
Towards an ultimate objective of lower cost, large area multijunction cells for space applications, we report herein the demonstration of high efficiency GaInP2/GaAs solar cells on germanium substrates, and highly uniform cell results from a multiwafer MOVPE reactor. A peak efficiency of 24.2% (AMO, 28 °C) has been achieved for dual-junctions grown on Ge. Further, the degree of MOVPE layer uniformity required for large area cells has been demonstrated with multiwafer growths on 3 inch diameter GaAs substrates. In addition to this experimental dual-junction result, we present modeling for the next step of this cell technology - a triple junction GaInP2/GaAs/Ge cell.
| Original language | American English |
|---|---|
| Pages | 2120-2123 |
| Number of pages | 4 |
| State | Published - 1994 |
| Externally published | Yes |
| Event | Proceedings of the 24th IEEE Photovoltaic Specialists Conference. Part 2 (of 2) - Waikoloa, HI, USA Duration: 5 Dec 1994 → 9 Dec 1994 |
Conference
| Conference | Proceedings of the 24th IEEE Photovoltaic Specialists Conference. Part 2 (of 2) |
|---|---|
| City | Waikoloa, HI, USA |
| Period | 5/12/94 → 9/12/94 |
NREL Publication Number
- NREL/CP-20156