Large-Area Junction Damage in Potential-Induced Degradation of c-Si Solar Modules

Chuanxiao Xiao; Chun Sheng Jiang; Steven Johnston; Steven Harvey; Peter Hacke; Mowafak Al-Jassim; Brian Gorman

doi:10.1109/PVSC.2017.8366015

Large-Area Junction Damage in Potential-Induced Degradation of c-Si Solar Modules

Chuanxiao Xiao, Chun Sheng Jiang, Steven Johnston, Steven Harvey, Peter Hacke, Mowafak Al-Jassim, Brian Gorman

Materials Science

Colorado School of Mines

Research output: Contribution to conference › Paper

Abstract

We report a large area of millimeter-scale p-n junction damage caused by potential-induced degradation (PID) of lab-stressed crystalline-Si modules. Kelvin probe force microscopy results show electrical potential change across the junction, and a recovery was observed after heat treatment. Electron-beam induced current results support the large-area damage instead of local shunts and a much lower collected current for the affected junction area. Furthermore, secondaryion mass spectrometry indicates that the large-area damage correlates with sodium contamination. The consistent results shed new light on PID mechanisms to investigate that are essentially different than the widely reported local junction shunts.

Original language	American English
Pages	1371-1375
Number of pages	5
DOIs	https://doi.org/10.1109/PVSC.2017.8366015
State	Published - 2018
Event	2017 IEEE 44th Photovoltaic Specialist Conference (PVSC) - Washington, D.C. Duration: 25 Jun 2017 → 30 Jun 2017

Conference

Conference	2017 IEEE 44th Photovoltaic Specialist Conference (PVSC)
City	Washington, D.C.
Period	25/06/17 → 30/06/17

NREL Publication Number

NREL/CP-5K00-67779

Keywords

junction damage
large area
microscopy
potential-induced degradation
recovery

Access to Document

10.1109/PVSC.2017.8366015

Cite this

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title = "Large-Area Junction Damage in Potential-Induced Degradation of c-Si Solar Modules",

abstract = "We report a large area of millimeter-scale p-n junction damage caused by potential-induced degradation (PID) of lab-stressed crystalline-Si modules. Kelvin probe force microscopy results show electrical potential change across the junction, and a recovery was observed after heat treatment. Electron-beam induced current results support the large-area damage instead of local shunts and a much lower collected current for the affected junction area. Furthermore, secondaryion mass spectrometry indicates that the large-area damage correlates with sodium contamination. The consistent results shed new light on PID mechanisms to investigate that are essentially different than the widely reported local junction shunts.",

keywords = "junction damage, large area, microscopy, potential-induced degradation, recovery",

author = "Chuanxiao Xiao and Jiang, {Chun Sheng} and Steven Johnston and Steven Harvey and Peter Hacke and Mowafak Al-Jassim and Brian Gorman",

year = "2018",

doi = "10.1109/PVSC.2017.8366015",

language = "American English",

pages = "1371--1375",

note = "2017 IEEE 44th Photovoltaic Specialist Conference (PVSC) ; Conference date: 25-06-2017 Through 30-06-2017",

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T1 - Large-Area Junction Damage in Potential-Induced Degradation of c-Si Solar Modules

AU - Xiao, Chuanxiao

AU - Jiang, Chun Sheng

AU - Johnston, Steven

AU - Harvey, Steven

AU - Hacke, Peter

AU - Al-Jassim, Mowafak

AU - Gorman, Brian

PY - 2018

Y1 - 2018

N2 - We report a large area of millimeter-scale p-n junction damage caused by potential-induced degradation (PID) of lab-stressed crystalline-Si modules. Kelvin probe force microscopy results show electrical potential change across the junction, and a recovery was observed after heat treatment. Electron-beam induced current results support the large-area damage instead of local shunts and a much lower collected current for the affected junction area. Furthermore, secondaryion mass spectrometry indicates that the large-area damage correlates with sodium contamination. The consistent results shed new light on PID mechanisms to investigate that are essentially different than the widely reported local junction shunts.

AB - We report a large area of millimeter-scale p-n junction damage caused by potential-induced degradation (PID) of lab-stressed crystalline-Si modules. Kelvin probe force microscopy results show electrical potential change across the junction, and a recovery was observed after heat treatment. Electron-beam induced current results support the large-area damage instead of local shunts and a much lower collected current for the affected junction area. Furthermore, secondaryion mass spectrometry indicates that the large-area damage correlates with sodium contamination. The consistent results shed new light on PID mechanisms to investigate that are essentially different than the widely reported local junction shunts.

KW - junction damage

KW - large area

KW - microscopy

KW - potential-induced degradation

KW - recovery

U2 - 10.1109/PVSC.2017.8366015

DO - 10.1109/PVSC.2017.8366015

M3 - Paper

SP - 1371

EP - 1375

T2 - 2017 IEEE 44th Photovoltaic Specialist Conference (PVSC)

Y2 - 25 June 2017 through 30 June 2017

ER -

Large-Area Junction Damage in Potential-Induced Degradation of c-Si Solar Modules

Abstract

Conference

NREL Publication Number

Keywords

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