@misc{e2a296d40bb64c02ab487a41f1269530,
title = "Large-Area Material and Junction Damage in c-Si Solar Cells by Potential-Induced Degradation",
abstract = "A new potential-induced degradation (PID) mechanism for c-Si is reported. Multiple characterization techniques in various aspects of a material's chemical, structural, electrical, and optoelectrical nature, as well as in atomic, nanometer, micrometer, millimeter, and cell and module scales, are combined. All results point consistently to a new discovery: substantial large-area deterioration of materials and junctions plays a major role.",
keywords = "c-Si Solar Cells, dark lock-in thermography, DLIT, EBIC, electron-beam induced current, kelvin probe force microscopy, KPFM, microwave photoconductance decay, photovoltaic, PV, solar, time-of-flight secondary-ion mass spectrometry, transmission electron microscopy",
author = "Chuanxiao Xiao and Jiang, {Chun Sheng} and Steven Harvey and Dana Kern and Xihan Chen and Helio Moutinho and Andrew Norman and Peter Hacke and Steven Johnston and Mowafak Al-Jassim and Jun Liu and Jie Pan",
year = "2019",
language = "American English",
series = "Presented at the 2019 Photovoltaic Reliability Workshop (PVRW), 26-28 February 2019, Lakewood, Colorado",
type = "Other",
}
