Large-Area Material and Junction Damage in c-Si Solar Cells by Potential-Induced Degradation

Chuanxiao Xiao; Chun Sheng Jiang; Steven Harvey; Helio Moutinho; Peter Hacke; Steven Johnston; Mowafak Al-Jassim; Jun Liu

doi:10.1109/PVSC.2018.8548169

Large-Area Material and Junction Damage in c-Si Solar Cells by Potential-Induced Degradation

Chuanxiao Xiao, Chun Sheng Jiang, Steven Harvey, Helio Moutinho, Peter Hacke, Steven Johnston, Mowafak Al-Jassim, Jun Liu

Materials Science

Research output: Contribution to conference › Paper › peer-review

Abstract

In this work, we discuss a new fundamental PID mechanism that has not been reported. We developed in-situ Kelvin probe force microscopy to monitor the potential evolution at nanometer scale under high-voltage stress. We observed large-area junction degradation during the stressing and junction recovery by heat treatment from the same location. Electron-beam induced current (EBIC) results support the large-area damage, which has a much lower collected current (dark region) and has an abrupt transition between the bright and dark areas, in addition to local shunts. Transmission electron microscopy does not find stacking faults in the dark-EBIC region. Furthermore, time-of-flight secondary-ion mass spectrometry indicates that the large-area damage correlates with more sodium content. The consistent results shed new light on PID mechanisms that are essentially different from the widely reported local-junction shunts.

Original language	American English
Pages	3797-3800
Number of pages	4
DOIs	https://doi.org/10.1109/PVSC.2018.8548169 https://doi.org/10.1109/PVSC.2018.8548169
State	Published - 26 Nov 2018
Event	7th IEEE World Conference on Photovoltaic Energy Conversion, WCPEC 2018 - Waikoloa Village, United States Duration: 10 Jun 2018 → 15 Jun 2018

Conference

Conference	7th IEEE World Conference on Photovoltaic Energy Conversion, WCPEC 2018
Country/Territory	United States
City	Waikoloa Village
Period	10/06/18 → 15/06/18

Bibliographical note

See NREL/CP-5K00-70819 for preprint

NREL Publication Number

NREL/CP-5K00-73755

Keywords

large-area damage
microscopy
Potential-induced degradation
Si
sodium

UN SDGs

This output contributes to the following UN Sustainable Development Goals (SDGs)

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Cite this

Xiao, C., Jiang, C. S., Harvey, S., Moutinho, H., Hacke, P., Johnston, S., Al-Jassim, M., & Liu, J. (2018). Large-Area Material and Junction Damage in c-Si Solar Cells by Potential-Induced Degradation. 3797-3800. Paper presented at 7th IEEE World Conference on Photovoltaic Energy Conversion, WCPEC 2018, Waikoloa Village, United States. https://doi.org/10.1109/PVSC.2018.8548169, https://doi.org/10.1109/PVSC.2018.8548169

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abstract = "In this work, we discuss a new fundamental PID mechanism that has not been reported. We developed in-situ Kelvin probe force microscopy to monitor the potential evolution at nanometer scale under high-voltage stress. We observed large-area junction degradation during the stressing and junction recovery by heat treatment from the same location. Electron-beam induced current (EBIC) results support the large-area damage, which has a much lower collected current (dark region) and has an abrupt transition between the bright and dark areas, in addition to local shunts. Transmission electron microscopy does not find stacking faults in the dark-EBIC region. Furthermore, time-of-flight secondary-ion mass spectrometry indicates that the large-area damage correlates with more sodium content. The consistent results shed new light on PID mechanisms that are essentially different from the widely reported local-junction shunts.",

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author = "Chuanxiao Xiao and Jiang, {Chun Sheng} and Steven Harvey and Helio Moutinho and Peter Hacke and Steven Johnston and Mowafak Al-Jassim and Jun Liu",

note = "See NREL/CP-5K00-70819 for preprint; 7th IEEE World Conference on Photovoltaic Energy Conversion, WCPEC 2018 ; Conference date: 10-06-2018 Through 15-06-2018",

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doi = "10.1109/PVSC.2018.8548169",

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Xiao, C, Jiang, CS , Harvey, S, Moutinho, H, Hacke, P , Johnston, S , Al-Jassim, M & Liu, J 2018, 'Large-Area Material and Junction Damage in c-Si Solar Cells by Potential-Induced Degradation', Paper presented at 7th IEEE World Conference on Photovoltaic Energy Conversion, WCPEC 2018, Waikoloa Village, United States, 10/06/18 - 15/06/18 pp. 3797-3800. https://doi.org/10.1109/PVSC.2018.8548169, https://doi.org/10.1109/PVSC.2018.8548169

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T1 - Large-Area Material and Junction Damage in c-Si Solar Cells by Potential-Induced Degradation

AU - Xiao, Chuanxiao

AU - Jiang, Chun Sheng

AU - Harvey, Steven

AU - Moutinho, Helio

AU - Hacke, Peter

AU - Johnston, Steven

AU - Al-Jassim, Mowafak

AU - Liu, Jun

N1 - See NREL/CP-5K00-70819 for preprint

PY - 2018/11/26

Y1 - 2018/11/26

N2 - In this work, we discuss a new fundamental PID mechanism that has not been reported. We developed in-situ Kelvin probe force microscopy to monitor the potential evolution at nanometer scale under high-voltage stress. We observed large-area junction degradation during the stressing and junction recovery by heat treatment from the same location. Electron-beam induced current (EBIC) results support the large-area damage, which has a much lower collected current (dark region) and has an abrupt transition between the bright and dark areas, in addition to local shunts. Transmission electron microscopy does not find stacking faults in the dark-EBIC region. Furthermore, time-of-flight secondary-ion mass spectrometry indicates that the large-area damage correlates with more sodium content. The consistent results shed new light on PID mechanisms that are essentially different from the widely reported local-junction shunts.

AB - In this work, we discuss a new fundamental PID mechanism that has not been reported. We developed in-situ Kelvin probe force microscopy to monitor the potential evolution at nanometer scale under high-voltage stress. We observed large-area junction degradation during the stressing and junction recovery by heat treatment from the same location. Electron-beam induced current (EBIC) results support the large-area damage, which has a much lower collected current (dark region) and has an abrupt transition between the bright and dark areas, in addition to local shunts. Transmission electron microscopy does not find stacking faults in the dark-EBIC region. Furthermore, time-of-flight secondary-ion mass spectrometry indicates that the large-area damage correlates with more sodium content. The consistent results shed new light on PID mechanisms that are essentially different from the widely reported local-junction shunts.

KW - large-area damage

KW - microscopy

KW - Potential-induced degradation

KW - Si

KW - sodium

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M3 - Paper

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T2 - 7th IEEE World Conference on Photovoltaic Energy Conversion, WCPEC 2018

Y2 - 10 June 2018 through 15 June 2018

ER -

Large-Area Material and Junction Damage in c-Si Solar Cells by Potential-Induced Degradation

Abstract

Conference

Bibliographical note

NREL Publication Number

Keywords

UN SDGs

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