Large Dielectric Constant (E/E0>6000) Ba0.4Sr0.6TiO3 Thin Films for High Performance Microwave Phase Shifters

C. M. Carlson; T. V. Rivkin; P. A. Parilla; J. D. Perkins; D. S. Ginley; A. B. Kozyrev; V. N. Oshadchy; A. S. Pavlov

doi:10.1063/1.126212

Large Dielectric Constant (E/E0>6000) Ba0.4Sr0.6TiO3 Thin Films for High Performance Microwave Phase Shifters

C. M. Carlson, T. V. Rivkin, P. A. Parilla, J. D. Perkins, D. S. Ginley, A. B. Kozyrev, V. N. Oshadchy, A. S. Pavlov

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Abstract

We deposited epitaxial Ba_0.4Sr_0.6TiO₃ (BST) films via laser ablation on MgO and LaAlO₃ (LAO) substrates for tunable microwave devices. Postdeposition anneals (∼1100°C in O₂) improved the morphology and overall dielectric properties of films on both substrates, but shifted the temperature of maximum dielectric constant (T_max) up for BST/LAO and down for BST/MgO. These substrate-dependent T_max shifts had opposite effects on the room-temperature dielectric properties. Overall, BST films on MgO had the larger maximum dielectric constant (∈/∈₀≥6000) and tunability (Δ∈/∈≥65%), but these maxima occurred at 227 K. 30 GHz phase shifters made from similar films had figures of merit (ratio of maximum phase shift to insertion loss) of ∼45°/dB and phase shifts of ∼400° under 500 V (∼13 V/μm) bias, illustrating their utility for many frequency-agile microwave devices.

Original language	American English
Pages (from-to)	1920-1922
Number of pages	3
Journal	Applied Physics Letters
Volume	76
Issue number	14
DOIs	https://doi.org/10.1063/1.126212 https://doi.org/10.1063/1.126212
State	Published - 3 Apr 2000

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NREL/JA-520-28631

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title = "Large Dielectric Constant (E/E0>6000) Ba0.4Sr0.6TiO3 Thin Films for High Performance Microwave Phase Shifters",

abstract = "We deposited epitaxial Ba0.4Sr0.6TiO3 (BST) films via laser ablation on MgO and LaAlO3 (LAO) substrates for tunable microwave devices. Postdeposition anneals (∼1100°C in O2) improved the morphology and overall dielectric properties of films on both substrates, but shifted the temperature of maximum dielectric constant (Tmax) up for BST/LAO and down for BST/MgO. These substrate-dependent Tmax shifts had opposite effects on the room-temperature dielectric properties. Overall, BST films on MgO had the larger maximum dielectric constant (∈/∈0≥6000) and tunability (Δ∈/∈≥65%), but these maxima occurred at 227 K. 30 GHz phase shifters made from similar films had figures of merit (ratio of maximum phase shift to insertion loss) of ∼45°/dB and phase shifts of ∼400° under 500 V (∼13 V/μm) bias, illustrating their utility for many frequency-agile microwave devices.",

author = "Carlson, {C. M.} and Rivkin, {T. V.} and Parilla, {P. A.} and Perkins, {J. D.} and Ginley, {D. S.} and Kozyrev, {A. B.} and Oshadchy, {V. N.} and Pavlov, {A. S.}",

year = "2000",

month = apr,

day = "3",

doi = "10.1063/1.126212",

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T1 - Large Dielectric Constant (E/E0>6000) Ba0.4Sr0.6TiO3 Thin Films for High Performance Microwave Phase Shifters

AU - Carlson, C. M.

AU - Rivkin, T. V.

AU - Parilla, P. A.

AU - Perkins, J. D.

AU - Ginley, D. S.

AU - Kozyrev, A. B.

AU - Oshadchy, V. N.

AU - Pavlov, A. S.

PY - 2000/4/3

Y1 - 2000/4/3

N2 - We deposited epitaxial Ba0.4Sr0.6TiO3 (BST) films via laser ablation on MgO and LaAlO3 (LAO) substrates for tunable microwave devices. Postdeposition anneals (∼1100°C in O2) improved the morphology and overall dielectric properties of films on both substrates, but shifted the temperature of maximum dielectric constant (Tmax) up for BST/LAO and down for BST/MgO. These substrate-dependent Tmax shifts had opposite effects on the room-temperature dielectric properties. Overall, BST films on MgO had the larger maximum dielectric constant (∈/∈0≥6000) and tunability (Δ∈/∈≥65%), but these maxima occurred at 227 K. 30 GHz phase shifters made from similar films had figures of merit (ratio of maximum phase shift to insertion loss) of ∼45°/dB and phase shifts of ∼400° under 500 V (∼13 V/μm) bias, illustrating their utility for many frequency-agile microwave devices.

AB - We deposited epitaxial Ba0.4Sr0.6TiO3 (BST) films via laser ablation on MgO and LaAlO3 (LAO) substrates for tunable microwave devices. Postdeposition anneals (∼1100°C in O2) improved the morphology and overall dielectric properties of films on both substrates, but shifted the temperature of maximum dielectric constant (Tmax) up for BST/LAO and down for BST/MgO. These substrate-dependent Tmax shifts had opposite effects on the room-temperature dielectric properties. Overall, BST films on MgO had the larger maximum dielectric constant (∈/∈0≥6000) and tunability (Δ∈/∈≥65%), but these maxima occurred at 227 K. 30 GHz phase shifters made from similar films had figures of merit (ratio of maximum phase shift to insertion loss) of ∼45°/dB and phase shifts of ∼400° under 500 V (∼13 V/μm) bias, illustrating their utility for many frequency-agile microwave devices.

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JO - Applied Physics Letters

JF - Applied Physics Letters

IS - 14

ER -

Large Dielectric Constant (E/E0>6000) Ba0.4Sr0.6TiO3 Thin Films for High Performance Microwave Phase Shifters

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