Large Dielectric Constant (E/E0>6000) Ba0.4Sr0.6TiO3 Thin Films for High Performance Microwave Phase Shifters

C. M. Carlson; T. V. Rivkin; P. A. Parilla; J. D. Perkins; D. S. Ginley; A. B. Kozyrev; V. N. Oshadchy; A. S. Pavlov

doi:10.1063/1.126212

Large Dielectric Constant (E/E0>6000) Ba0.4Sr0.6TiO3 Thin Films for High Performance Microwave Phase Shifters

C. M. Carlson
, T. V. Rivkin
, P. A. Parilla
, J. D. Perkins
, D. S. Ginley
, A. B. Kozyrev
, V. N. Oshadchy
, A. S. Pavlov

Research output: Contribution to journal › Article › peer-review

233 Scopus Citations

Abstract

We deposited epitaxial Ba_0.4Sr_0.6TiO₃ (BST) films via laser ablation on MgO and LaAlO₃ (LAO) substrates for tunable microwave devices. Postdeposition anneals (∼1100°C in O₂) improved the morphology and overall dielectric properties of films on both substrates, but shifted the temperature of maximum dielectric constant (T_max) up for BST/LAO and down for BST/MgO. These substrate-dependent T_max shifts had opposite effects on the room-temperature dielectric properties. Overall, BST films on MgO had the larger maximum dielectric constant (∈/∈₀≥6000) and tunability (Δ∈/∈≥65%), but these maxima occurred at 227 K. 30 GHz phase shifters made from similar films had figures of merit (ratio of maximum phase shift to insertion loss) of ∼45°/dB and phase shifts of ∼400° under 500 V (∼13 V/μm) bias, illustrating their utility for many frequency-agile microwave devices.

Original language	American English
Pages (from-to)	1920-1922
Number of pages	3
Journal	Applied Physics Letters
Volume	76
Issue number	14
DOIs	https://doi.org/10.1063/1.126212 https://doi.org/10.1063/1.126212
State	Published - 3 Apr 2000

NLR Publication Number

NREL/JA-520-28631

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@article{1af2817781b445cb98a867f984a58211,

title = "Large Dielectric Constant (E/E0>6000) Ba0.4Sr0.6TiO3 Thin Films for High Performance Microwave Phase Shifters",

abstract = "We deposited epitaxial Ba0.4Sr0.6TiO3 (BST) films via laser ablation on MgO and LaAlO3 (LAO) substrates for tunable microwave devices. Postdeposition anneals (∼1100°C in O2) improved the morphology and overall dielectric properties of films on both substrates, but shifted the temperature of maximum dielectric constant (Tmax) up for BST/LAO and down for BST/MgO. These substrate-dependent Tmax shifts had opposite effects on the room-temperature dielectric properties. Overall, BST films on MgO had the larger maximum dielectric constant (∈/∈0≥6000) and tunability (Δ∈/∈≥65\%), but these maxima occurred at 227 K. 30 GHz phase shifters made from similar films had figures of merit (ratio of maximum phase shift to insertion loss) of ∼45°/dB and phase shifts of ∼400° under 500 V (∼13 V/μm) bias, illustrating their utility for many frequency-agile microwave devices.",

author = "Carlson, \{C. M.\} and Rivkin, \{T. V.\} and Parilla, \{P. A.\} and Perkins, \{J. D.\} and Ginley, \{D. S.\} and Kozyrev, \{A. B.\} and Oshadchy, \{V. N.\} and Pavlov, \{A. S.\}",

year = "2000",

month = apr,

day = "3",

doi = "10.1063/1.126212",

language = "American English",

volume = "76",

pages = "1920--1922",

journal = "Applied Physics Letters",

issn = "0003-6951",

publisher = "American Institute of Physics",

number = "14",

}

TY - JOUR

T1 - Large Dielectric Constant (E/E0>6000) Ba0.4Sr0.6TiO3 Thin Films for High Performance Microwave Phase Shifters

AU - Carlson, C. M.

AU - Rivkin, T. V.

AU - Parilla, P. A.

AU - Perkins, J. D.

AU - Ginley, D. S.

AU - Kozyrev, A. B.

AU - Oshadchy, V. N.

AU - Pavlov, A. S.

PY - 2000/4/3

Y1 - 2000/4/3

N2 - We deposited epitaxial Ba0.4Sr0.6TiO3 (BST) films via laser ablation on MgO and LaAlO3 (LAO) substrates for tunable microwave devices. Postdeposition anneals (∼1100°C in O2) improved the morphology and overall dielectric properties of films on both substrates, but shifted the temperature of maximum dielectric constant (Tmax) up for BST/LAO and down for BST/MgO. These substrate-dependent Tmax shifts had opposite effects on the room-temperature dielectric properties. Overall, BST films on MgO had the larger maximum dielectric constant (∈/∈0≥6000) and tunability (Δ∈/∈≥65%), but these maxima occurred at 227 K. 30 GHz phase shifters made from similar films had figures of merit (ratio of maximum phase shift to insertion loss) of ∼45°/dB and phase shifts of ∼400° under 500 V (∼13 V/μm) bias, illustrating their utility for many frequency-agile microwave devices.

AB - We deposited epitaxial Ba0.4Sr0.6TiO3 (BST) films via laser ablation on MgO and LaAlO3 (LAO) substrates for tunable microwave devices. Postdeposition anneals (∼1100°C in O2) improved the morphology and overall dielectric properties of films on both substrates, but shifted the temperature of maximum dielectric constant (Tmax) up for BST/LAO and down for BST/MgO. These substrate-dependent Tmax shifts had opposite effects on the room-temperature dielectric properties. Overall, BST films on MgO had the larger maximum dielectric constant (∈/∈0≥6000) and tunability (Δ∈/∈≥65%), but these maxima occurred at 227 K. 30 GHz phase shifters made from similar films had figures of merit (ratio of maximum phase shift to insertion loss) of ∼45°/dB and phase shifts of ∼400° under 500 V (∼13 V/μm) bias, illustrating their utility for many frequency-agile microwave devices.

UR - https://www.scopus.com/pages/publications/0000472778

U2 - 10.1063/1.126212

DO - 10.1063/1.126212

M3 - Article

AN - SCOPUS:0000472778

SN - 0003-6951

VL - 76

SP - 1920

EP - 1922

JO - Applied Physics Letters

JF - Applied Physics Letters

IS - 14

ER -

Large Dielectric Constant (E/E0>6000) Ba0.4Sr0.6TiO3 Thin Films for High Performance Microwave Phase Shifters

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