Large Grain Poly-Si Thin Films by Metal Induced Crystallization of a-Si:H

Marwan A. Albarghouti; Husam H. Abu-Safe; Hameed A. Naseem; William D. Brown; Mowafak M. Al-Jassim; Kim M. Jones

Large Grain Poly-Si Thin Films by Metal Induced Crystallization of a-Si:H

Marwan A. Albarghouti, Husam H. Abu-Safe, Hameed A. Naseem, William D. Brown, Mowafak M. Al-Jassim, Kim M. Jones

Materials Science

Research output: Contribution to conference › Paper › peer-review

1 Scopus Citations

Abstract

Large grain poly-Si thin films on glass substrates have been successfully fabricated. The film thickness was 400 nm and the grains sizes were in excess of several microns. The films were fabricated using aluminum-induced crystallization of a-Si:H in the presence of a silicon oxide layer at the Al/a-Si:H interface. The a-Si:H film was deposited on glass substrates and the annealing temperatures and annealing times were kept below 450°C and 30 minutes, respectively. The resulting poly-Si was heavily Al-doped.

Original language	American English
Pages	1070-1073
Number of pages	4
State	Published - 2005
Event	31st IEEE Photovoltaic Specialists Conference - 2005 - Lake Buena Vista, FL, United States Duration: 3 Jan 2005 → 7 Jan 2005

Conference

Conference	31st IEEE Photovoltaic Specialists Conference - 2005
Country/Territory	United States
City	Lake Buena Vista, FL
Period	3/01/05 → 7/01/05

NREL Publication Number

NREL/CP-520-38899

Cite this

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title = "Large Grain Poly-Si Thin Films by Metal Induced Crystallization of a-Si:H",

abstract = "Large grain poly-Si thin films on glass substrates have been successfully fabricated. The film thickness was 400 nm and the grains sizes were in excess of several microns. The films were fabricated using aluminum-induced crystallization of a-Si:H in the presence of a silicon oxide layer at the Al/a-Si:H interface. The a-Si:H film was deposited on glass substrates and the annealing temperatures and annealing times were kept below 450°C and 30 minutes, respectively. The resulting poly-Si was heavily Al-doped.",

author = "Albarghouti, {Marwan A.} and Abu-Safe, {Husam H.} and Naseem, {Hameed A.} and Brown, {William D.} and Al-Jassim, {Mowafak M.} and Jones, {Kim M.}",

year = "2005",

language = "American English",

pages = "1070--1073",

note = "31st IEEE Photovoltaic Specialists Conference - 2005 ; Conference date: 03-01-2005 Through 07-01-2005",

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TY - CONF

T1 - Large Grain Poly-Si Thin Films by Metal Induced Crystallization of a-Si:H

AU - Albarghouti, Marwan A.

AU - Abu-Safe, Husam H.

AU - Naseem, Hameed A.

AU - Brown, William D.

AU - Al-Jassim, Mowafak M.

AU - Jones, Kim M.

PY - 2005

Y1 - 2005

N2 - Large grain poly-Si thin films on glass substrates have been successfully fabricated. The film thickness was 400 nm and the grains sizes were in excess of several microns. The films were fabricated using aluminum-induced crystallization of a-Si:H in the presence of a silicon oxide layer at the Al/a-Si:H interface. The a-Si:H film was deposited on glass substrates and the annealing temperatures and annealing times were kept below 450°C and 30 minutes, respectively. The resulting poly-Si was heavily Al-doped.

AB - Large grain poly-Si thin films on glass substrates have been successfully fabricated. The film thickness was 400 nm and the grains sizes were in excess of several microns. The films were fabricated using aluminum-induced crystallization of a-Si:H in the presence of a silicon oxide layer at the Al/a-Si:H interface. The a-Si:H film was deposited on glass substrates and the annealing temperatures and annealing times were kept below 450°C and 30 minutes, respectively. The resulting poly-Si was heavily Al-doped.

UR - http://www.scopus.com/inward/record.url?scp=27944437086&partnerID=8YFLogxK

M3 - Paper

AN - SCOPUS:27944437086

SP - 1070

EP - 1073

T2 - 31st IEEE Photovoltaic Specialists Conference - 2005

Y2 - 3 January 2005 through 7 January 2005

ER -

Large Grain Poly-Si Thin Films by Metal Induced Crystallization of a-Si:H

Abstract

Conference

NREL Publication Number

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