Large, Nitrogen-Induced Increase of the Electron Effective Mass in InyGa1-yNxAs1-x

C. Skierbiszewski; P. Perlin; P. Wisniewski; W. Knap; T. Suski; W. Walukiewicz; W. Shan; K. M. Yu; J. W. Ager; E. E. Haller; J. F. Geisz; J. M. Olson

doi:10.1063/1.126360

Large, Nitrogen-Induced Increase of the Electron Effective Mass in InyGa1-yNxAs1-x

C. Skierbiszewski, P. Perlin, P. Wisniewski, W. Knap, T. Suski, W. Walukiewicz, W. Shan, K. M. Yu, J. W. Ager, E. E. Haller, J. F. Geisz, J. M. Olson

Chemistry and Nanoscience

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Abstract

A dramatic increase of the conduction band electron mass in a nitrogen-containing III-V alloy is reported. The mass is found to be strongly dependent on the nitrogen content and the electron concentration with a value as large as 0.4m₀ in In_0.08Ga_0.92As_0.967N_0.033 with 6 × 10¹⁹ cm^-3 free electrons. This mass is more than five times larger than the electron effective mass in GaAs and comparable to typical heavy hole masses in III-V compounds. The results provide a critical test and fully confirm the predictions of the recently proposed band anticrossing model of the electronic structure of the III-N-V alloys.

Original language	American English
Pages (from-to)	2409-2411
Number of pages	3
Journal	Applied Physics Letters
Volume	76
Issue number	17
DOIs	https://doi.org/10.1063/1.126360 https://doi.org/10.1063/1.126360
State	Published - 2000

NREL Publication Number

NREL/JA-520-28630

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title = "Large, Nitrogen-Induced Increase of the Electron Effective Mass in InyGa1-yNxAs1-x",

abstract = "A dramatic increase of the conduction band electron mass in a nitrogen-containing III-V alloy is reported. The mass is found to be strongly dependent on the nitrogen content and the electron concentration with a value as large as 0.4m0 in In0.08Ga0.92As0.967N0.033 with 6 × 1019 cm-3 free electrons. This mass is more than five times larger than the electron effective mass in GaAs and comparable to typical heavy hole masses in III-V compounds. The results provide a critical test and fully confirm the predictions of the recently proposed band anticrossing model of the electronic structure of the III-N-V alloys.",

author = "C. Skierbiszewski and P. Perlin and P. Wisniewski and W. Knap and T. Suski and W. Walukiewicz and W. Shan and Yu, {K. M.} and Ager, {J. W.} and Haller, {E. E.} and Geisz, {J. F.} and Olson, {J. M.}",

year = "2000",

doi = "10.1063/1.126360",

language = "American English",

volume = "76",

pages = "2409--2411",

journal = "Applied Physics Letters",

issn = "0003-6951",

publisher = "American Institute of Physics",

number = "17",

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TY - JOUR

T1 - Large, Nitrogen-Induced Increase of the Electron Effective Mass in InyGa1-yNxAs1-x

AU - Skierbiszewski, C.

AU - Perlin, P.

AU - Wisniewski, P.

AU - Knap, W.

AU - Suski, T.

AU - Walukiewicz, W.

AU - Shan, W.

AU - Yu, K. M.

AU - Ager, J. W.

AU - Haller, E. E.

AU - Geisz, J. F.

AU - Olson, J. M.

PY - 2000

Y1 - 2000

N2 - A dramatic increase of the conduction band electron mass in a nitrogen-containing III-V alloy is reported. The mass is found to be strongly dependent on the nitrogen content and the electron concentration with a value as large as 0.4m0 in In0.08Ga0.92As0.967N0.033 with 6 × 1019 cm-3 free electrons. This mass is more than five times larger than the electron effective mass in GaAs and comparable to typical heavy hole masses in III-V compounds. The results provide a critical test and fully confirm the predictions of the recently proposed band anticrossing model of the electronic structure of the III-N-V alloys.

AB - A dramatic increase of the conduction band electron mass in a nitrogen-containing III-V alloy is reported. The mass is found to be strongly dependent on the nitrogen content and the electron concentration with a value as large as 0.4m0 in In0.08Ga0.92As0.967N0.033 with 6 × 1019 cm-3 free electrons. This mass is more than five times larger than the electron effective mass in GaAs and comparable to typical heavy hole masses in III-V compounds. The results provide a critical test and fully confirm the predictions of the recently proposed band anticrossing model of the electronic structure of the III-N-V alloys.

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U2 - 10.1063/1.126360

DO - 10.1063/1.126360

M3 - Article

AN - SCOPUS:0000623708

SN - 0003-6951

VL - 76

SP - 2409

EP - 2411

JO - Applied Physics Letters

JF - Applied Physics Letters

IS - 17

ER -

Large, Nitrogen-Induced Increase of the Electron Effective Mass in InyGa1-yNxAs1-x

Abstract

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