Large, Nitrogen-Induced Increase of the Electron Effective Mass in InyGa1-yNxAs1-x

C. Skierbiszewski, P. Perlin, P. Wisniewski, W. Knap, T. Suski, W. Walukiewicz, W. Shan, K. M. Yu, J. W. Ager, E. E. Haller, J. F. Geisz, J. M. Olson

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A dramatic increase of the conduction band electron mass in a nitrogen-containing III-V alloy is reported. The mass is found to be strongly dependent on the nitrogen content and the electron concentration with a value as large as 0.4m0 in In0.08Ga0.92As0.967N0.033 with 6 × 1019 cm-3 free electrons. This mass is more than five times larger than the electron effective mass in GaAs and comparable to typical heavy hole masses in III-V compounds. The results provide a critical test and fully confirm the predictions of the recently proposed band anticrossing model of the electronic structure of the III-N-V alloys.

Original languageAmerican English
Pages (from-to)2409-2411
Number of pages3
JournalApplied Physics Letters
Issue number17
StatePublished - 2000

NREL Publication Number

  • NREL/JA-520-28630


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