Abstract
Deep level defects in silicon are identified by measuring the recombination lifetime as a function of the injection level. The basic models for recombination at deep and shallow centers is developed. The defect used for the theoretical model is the well-known interstitial Fe ion in silicon. Data are presented on silicon samples ranging in defect content from intentionally Fe-doped samples to anultra-pure float-zone grown sample. These data are analyzed in terms of the injection-level spectroscopy model.
Original language | American English |
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Number of pages | 12 |
State | Published - 1998 |
Event | National Center for Photovolatics Program Review Meeting - Denver, Colorado Duration: 8 Sep 1998 → 11 Sep 1998 |
Conference
Conference | National Center for Photovolatics Program Review Meeting |
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City | Denver, Colorado |
Period | 8/09/98 → 11/09/98 |
NREL Publication Number
- NREL/CP-520-25628