Large-Signal Injection-Level Spectroscopy of Impurities in Silicon

    Research output: Contribution to conferencePaper

    Abstract

    Deep level defects in silicon are identified by measuring the recombination lifetime as a function of the injection level. The basic models for recombination at deep and shallow centers is developed. The defect used for the theoretical model is the well-known interstitial Fe ion in silicon. Data are presented on silicon samples ranging in defect content from intentionally Fe-doped samples to anultra-pure float-zone grown sample. These data are analyzed in terms of the injection-level spectroscopy model.
    Original languageAmerican English
    Number of pages12
    StatePublished - 1998
    EventNational Center for Photovolatics Program Review Meeting - Denver, Colorado
    Duration: 8 Sep 199811 Sep 1998

    Conference

    ConferenceNational Center for Photovolatics Program Review Meeting
    CityDenver, Colorado
    Period8/09/9811/09/98

    NREL Publication Number

    • NREL/CP-520-25628

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