Large-Signal Injection-Level Spectroscopy of Impurities in Silicon

Large-Signal Injection-Level Spectroscopy of Impurities in Silicon

NREL

Research output: Contribution to conference › Paper

Abstract

Deep level defects in silicon are identified by measuring the recombination lifetime as a function of the injection level. The basic models for recombination at deep and shallow centers is developed. The defect used for the theoretical model is the well-known interstitial Fe ion in silicon. Data are presented on silicon samples ranging in defect content from intentionally Fe-doped samples to anultra-pure float-zone grown sample. These data are analyzed in terms of the injection-level spectroscopy model.

Original language	American English
Number of pages	12
State	Published - 1998
Event	National Center for Photovolatics Program Review Meeting - Denver, Colorado Duration: 8 Sep 1998 → 11 Sep 1998

Conference

Conference	National Center for Photovolatics Program Review Meeting
City	Denver, Colorado
Period	8/09/98 → 11/09/98

NLR Publication Number

NREL/CP-520-25628

Access to Document

https://www.nrel.gov/docs/fy99osti/25628.pdf

Cite this

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title = "Large-Signal Injection-Level Spectroscopy of Impurities in Silicon",

abstract = "Deep level defects in silicon are identified by measuring the recombination lifetime as a function of the injection level. The basic models for recombination at deep and shallow centers is developed. The defect used for the theoretical model is the well-known interstitial Fe ion in silicon. Data are presented on silicon samples ranging in defect content from intentionally Fe-doped samples to anultra-pure float-zone grown sample. These data are analyzed in terms of the injection-level spectroscopy model.",

author = "NREL",

year = "1998",

language = "American English",

note = "National Center for Photovolatics Program Review Meeting ; Conference date: 08-09-1998 Through 11-09-1998",

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TY - CONF

T1 - Large-Signal Injection-Level Spectroscopy of Impurities in Silicon

AU - NREL, null

PY - 1998

Y1 - 1998

N2 - Deep level defects in silicon are identified by measuring the recombination lifetime as a function of the injection level. The basic models for recombination at deep and shallow centers is developed. The defect used for the theoretical model is the well-known interstitial Fe ion in silicon. Data are presented on silicon samples ranging in defect content from intentionally Fe-doped samples to anultra-pure float-zone grown sample. These data are analyzed in terms of the injection-level spectroscopy model.

AB - Deep level defects in silicon are identified by measuring the recombination lifetime as a function of the injection level. The basic models for recombination at deep and shallow centers is developed. The defect used for the theoretical model is the well-known interstitial Fe ion in silicon. Data are presented on silicon samples ranging in defect content from intentionally Fe-doped samples to anultra-pure float-zone grown sample. These data are analyzed in terms of the injection-level spectroscopy model.

M3 - Paper

T2 - National Center for Photovolatics Program Review Meeting

Y2 - 8 September 1998 through 11 September 1998

ER -

Large-Signal Injection-Level Spectroscopy of Impurities in Silicon

Abstract

Conference

NLR Publication Number

Access to Document

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Cite this