Lateral Composition Modulation in AlAs/InAs Short Period Superlattices Grown on InP(001)

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    Abstract

    Spontaneous lateral composition modulation as a consequence of the deposition of a (A1As)n/(InAs)m short period superlattice on an InP(001) substrate is examined. Transmission electron microscopy images show distinct composition modulation appearing as vertical regions of In- and Al-rich materials alternating in the [110] projection. Ther periodicity of the modulation is 130.ANG., and isasymmetric. The transmission electron and x-ray diffraction patterns from the structure exhibit distinct satellite spots which correspond ot the lateral periodicity. Transmission electron microscopy images show that the individual superlattice layers possess cusplike undulations, which directly correlate with the composition modulation. Composition modulation in this sample appears to be coupledto morphological and compositional instabilities at the surface due to strain.
    Original languageAmerican English
    Pages (from-to)1402-1404
    Number of pages3
    JournalApplied Physics Letters
    Volume70
    Issue number11
    DOIs
    StatePublished - 1997

    NREL Publication Number

    • NREL/JA-450-23343

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