Abstract
Spontaneous lateral composition modulation as a consequence of the deposition of a (A1As)n/(InAs)m short period superlattice on an InP(001) substrate is examined. Transmission electron microscopy images show distinct composition modulation appearing as vertical regions of In- and Al-rich materials alternating in the [110] projection. Ther periodicity of the modulation is 130.ANG., and isasymmetric. The transmission electron and x-ray diffraction patterns from the structure exhibit distinct satellite spots which correspond ot the lateral periodicity. Transmission electron microscopy images show that the individual superlattice layers possess cusplike undulations, which directly correlate with the composition modulation. Composition modulation in this sample appears to be coupledto morphological and compositional instabilities at the surface due to strain.
Original language | American English |
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Pages (from-to) | 1402-1404 |
Number of pages | 3 |
Journal | Applied Physics Letters |
Volume | 70 |
Issue number | 11 |
DOIs | |
State | Published - 1997 |
NREL Publication Number
- NREL/JA-450-23343