Lateral Electron Transport in Cu(In,Ga)Se2 Investigated by Electro-Assisted Scanning Tunneling Microscopy

Manuel J. Romero, Chun Sheng Jiang, Rommel Noufi, Mowafak Al-Jassim

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22 Scopus Citations

Abstract

We investigate the lateral electron transport across grain boundaries in Cu (In,Ga) Se2 (CIGS) by a combination of scanning tunneling microscopy (STM) with the excitation provided by the electron beam in electron microscopy-or electro-assisted STM. Using this method, we report evidence for a significant barrier for electron diffusion across grain boundaries in CuGa Se2 (CGS), which is not present in CuIn Se2 (CIS). Finally, we discuss the effects of gallium addition.

Original languageAmerican English
Article number172106
Pages (from-to)1-3
Number of pages3
JournalApplied Physics Letters
Volume87
Issue number17
DOIs
StatePublished - 24 Oct 2005

NREL Publication Number

  • NREL/JA-520-38140

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