Abstract
We investigate the lateral electron transport across grain boundaries in Cu (In,Ga) Se2 (CIGS) by a combination of scanning tunneling microscopy (STM) with the excitation provided by the electron beam in electron microscopy-or electro-assisted STM. Using this method, we report evidence for a significant barrier for electron diffusion across grain boundaries in CuGa Se2 (CGS), which is not present in CuIn Se2 (CIS). Finally, we discuss the effects of gallium addition.
Original language | American English |
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Article number | 172106 |
Pages (from-to) | 1-3 |
Number of pages | 3 |
Journal | Applied Physics Letters |
Volume | 87 |
Issue number | 17 |
DOIs | |
State | Published - 24 Oct 2005 |
NREL Publication Number
- NREL/JA-520-38140