Abstract
Recent developments in epitaxial III-V multijunction solar cell technology have allowed concentrator and 1-sun cells to reach new heights in efficiency under the terrestrial solar spectrum. The bandgaps of the GaInP and GalnAs subcells are controlled by varying indium content, up to 12% indium in the GainAs middle cell, or 0.8% lattice mismatch. Shockley-Read-Hall recombination at dislocations in such metamorphic cells has been restricted to lower levels than previously achieved, and is compared to the lattice-matched case. Terrestrial GaInP/GaInAs/Ge 3-junction cells have been produced at Spectrolab with record efficiencies independently verified at NREL, of 31.3% for metamorphic 1-sun cells and 32.0% for lattice-matched 1-sun cells (25°C, AM1.5G, 4.00 cm 2), and 35.2% for lattice-matched concentrator cells under the AM1.5 Direct, low-AOD spectrum (25°C, 66 suns, 0.26 cm 2).
Original language | American English |
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Pages | 622-625 |
Number of pages | 4 |
State | Published - 2003 |
Event | Proceddings of the 3rd World Conference on Photovoltaic Energy Conversion - Osaka, Japan Duration: 11 May 2003 → 18 May 2003 |
Conference
Conference | Proceddings of the 3rd World Conference on Photovoltaic Energy Conversion |
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Country/Territory | Japan |
City | Osaka |
Period | 11/05/03 → 18/05/03 |
NREL Publication Number
- NREL/CP-520-36512