Lattice-Matched and Metamorphic GaInP/GaInAs/Ge Concentrator Solar Cells

  • R. R. King
  • , C. M. Fetzer
  • , P. C. Colter
  • , K. M. Edmondson
  • , D. C. Law
  • , A. P. Stavrides
  • , H. Yoon
  • , G. S. Kinsey
  • , H. L. Cotal
  • , J. H. Ermer
  • , R. A. Sherif
  • , K. Emery
  • , W. Metzger
  • , R. K. Ahrenkiel
  • , N. H. Karam

Research output: Contribution to conferencePaperpeer-review

42 Scopus Citations

Abstract

Recent developments in epitaxial III-V multijunction solar cell technology have allowed concentrator and 1-sun cells to reach new heights in efficiency under the terrestrial solar spectrum. The bandgaps of the GaInP and GalnAs subcells are controlled by varying indium content, up to 12% indium in the GainAs middle cell, or 0.8% lattice mismatch. Shockley-Read-Hall recombination at dislocations in such metamorphic cells has been restricted to lower levels than previously achieved, and is compared to the lattice-matched case. Terrestrial GaInP/GaInAs/Ge 3-junction cells have been produced at Spectrolab with record efficiencies independently verified at NREL, of 31.3% for metamorphic 1-sun cells and 32.0% for lattice-matched 1-sun cells (25°C, AM1.5G, 4.00 cm 2), and 35.2% for lattice-matched concentrator cells under the AM1.5 Direct, low-AOD spectrum (25°C, 66 suns, 0.26 cm 2).

Original languageAmerican English
Pages622-625
Number of pages4
StatePublished - 2003
EventProceddings of the 3rd World Conference on Photovoltaic Energy Conversion - Osaka, Japan
Duration: 11 May 200318 May 2003

Conference

ConferenceProceddings of the 3rd World Conference on Photovoltaic Energy Conversion
Country/TerritoryJapan
CityOsaka
Period11/05/0318/05/03

NLR Publication Number

  • NREL/CP-520-36512

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