Lattice-Matched GaNPAs-On-Silicon Tandem Solar Cells

    Research output: Contribution to conferencePaper

    Abstract

    A two-junction device consisting of a 1.7-eV GaNPAs junction on a 1.1-eV silicon junction has the theoretical potential to achieve nearly optimal efficiency for a two-junction tandem cell. We have demonstrated a monolithic III-V-on-silicon tandem solar cell in which most of the III-V layers are nearly lattice-matched to the silicon substrate. The cell includes a 1.8 eV GaNPAs top cell, aGaP-based tunnel junction (TJ), and a diffused silicon junction formed during the epitaxial growth of GaNP on the silicon substrate. This tandem on silicon has a Voc of 1.53 V and an AM1.5G efficiency of 5.2% without any antireflection coating. Low currents in the top cell are the primary limitation to higher efficiency at this point.
    Original languageAmerican English
    Number of pages7
    StatePublished - 2005
    Event31st IEEE Photovoltaics Specialists Conference and Exhibition - Lake Buena Vista, Florida
    Duration: 3 Jan 20057 Jan 2005

    Conference

    Conference31st IEEE Photovoltaics Specialists Conference and Exhibition
    CityLake Buena Vista, Florida
    Period3/01/057/01/05

    NREL Publication Number

    • NREL/CP-520-37349

    Keywords

    • antireflection coatings
    • III-V
    • latticed-matched
    • PV
    • silicon
    • solar cells
    • tandem
    • tunnel junctions (TJ)
    • two-junction devices

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