Abstract
A two-junction device consisting of a 1.7-eV GaNPAs junction on a 1.1-eV silicon junction has the theoretical potential to achieve nearly optimal efficiency for a two-junction tandem cell. We have demonstrated a monolithic III-V-on-silicon tandem solar cell in which most of the III-V layers are nearly lattice-matched to the silicon substrate. The cell includes a 1.8 eV GaNPAs top cell, aGaP-based tunnel junction (TJ), and a diffused silicon junction formed during the epitaxial growth of GaNP on the silicon substrate. This tandem on silicon has a Voc of 1.53 V and an AM1.5G efficiency of 5.2% without any antireflection coating. Low currents in the top cell are the primary limitation to higher efficiency at this point.
Original language | American English |
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Number of pages | 7 |
State | Published - 2005 |
Event | 31st IEEE Photovoltaics Specialists Conference and Exhibition - Lake Buena Vista, Florida Duration: 3 Jan 2005 → 7 Jan 2005 |
Conference
Conference | 31st IEEE Photovoltaics Specialists Conference and Exhibition |
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City | Lake Buena Vista, Florida |
Period | 3/01/05 → 7/01/05 |
NREL Publication Number
- NREL/CP-520-37349
Keywords
- antireflection coatings
- III-V
- latticed-matched
- PV
- silicon
- solar cells
- tandem
- tunnel junctions (TJ)
- two-junction devices