Lattice-Matched GaNPAs-On-Silicon Tandem Solar Cells

Research output: Contribution to conferencePaper


A two-junction device consisting of a 1.7-eV GaNPAs junction on a 1.1-eV silicon junction has the theoretical potential to achieve nearly optimal efficiency for a two-junction tandem cell. We have demonstrated a monolithic III-V-on-silicon tandem solar cell in which most of the III-V layers are nearly lattice-matched to the silicon substrate. The cell includes a 1.8 eV GaNPAs top cell, aGaP-based tunnel junction (TJ), and a diffused silicon junction formed during the epitaxial growth of GaNP on the silicon substrate. This tandem on silicon has a Voc of 1.53 V and an AM1.5G efficiency of 5.2% without any antireflection coating. Low currents in the top cell are the primary limitation to higher efficiency at this point.
Original languageAmerican English
Number of pages7
StatePublished - 2005
Event31st IEEE Photovoltaics Specialists Conference and Exhibition - Lake Buena Vista, Florida
Duration: 3 Jan 20057 Jan 2005


Conference31st IEEE Photovoltaics Specialists Conference and Exhibition
CityLake Buena Vista, Florida

NREL Publication Number

  • NREL/CP-520-37349


  • antireflection coatings
  • III-V
  • latticed-matched
  • PV
  • silicon
  • solar cells
  • tandem
  • tunnel junctions (TJ)
  • two-junction devices


Dive into the research topics of 'Lattice-Matched GaNPAs-On-Silicon Tandem Solar Cells'. Together they form a unique fingerprint.

Cite this