Lattice-Matched GaNPAs-on-Silicon Tandem Solar Cells

J. F. Geisz, J. M. Olson, D. J. Friedman, K. M. Jones, R. C. Reedy, M. J. Romero

Research output: Contribution to conferencePaperpeer-review

63 Scopus Citations


A two-junction device consisting of a 1.7-eV GaNPAs junction on a 1.1-eV silicon junction has the theoretical potential to achieve nearly optimal efficiency for a two-junction tandem cell. We have demonstrated a monolithic III-V-on-silicon tandem solar cell in which most of the III-V layers are nearly lattice-matched to the silicon substrate. The cell includes a 1.8 eV GaNPAs top cell, a GaP-based tunnel junction (TJ), and a diffused silicon junction formed during the epitaxial growth of GaNP on the silicon substrate. This tandem on silicon has a Voc of 1.53 V and an AM1.5G efficiency of 5.2% without any antireflection coating. Low currents in the top cell are the primary limitation to higher efficiency at this point.

Original languageAmerican English
Number of pages4
StatePublished - 2005
Event31st IEEE Photovoltaic Specialists Conference - 2005 - Lake Buena Vista, FL, United States
Duration: 3 Jan 20057 Jan 2005


Conference31st IEEE Photovoltaic Specialists Conference - 2005
Country/TerritoryUnited States
CityLake Buena Vista, FL

Bibliographical note

For preprint version see NREL/CP-520-37349

NREL Publication Number

  • NREL/CP-520-38889


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