Lattice-Mismatched GaAsP Solar Cells Grown on Silicon by OMVPE

J. F. Geisz; J. M. Olson; M. J. Romero; C. S. Jiang; A. G. Norman

doi:10.1109/WCPEC.2006.279570

Lattice-Mismatched GaAsP Solar Cells Grown on Silicon by OMVPE

J. F. Geisz, J. M. Olson, M. J. Romero, C. S. Jiang, A. G. Norman

National Renewable Energy Laboratory

Research output: Contribution to conference › Paper › peer-review

96 Scopus Citations

Abstract

We report on lattice-mismatched GaAs_0.7P_0.3 solar cells grown on silicon substrates. This composition of GaAs_0.7P _0.3 has a band gap of about 1.7 eV and is well suited as the top junction of a III-V/Si two-junction tandem solar cell. Using a thin, high-quality GaP nucleation layer, a lattice-matched GaN_0.02P _0.98 buffer layer, and a compositionally graded GaAs _xP_1-x buffer layer, the threading dislocation densities was reduced to less than 10⁸ cm-² in the active region. The efficiencies of these single-junction cells without any antireflection coatings were as high has 9.8% under the AM1.5G spectrum. The quality of these solar cells based on V_oc is comparable to the best III-V solar cells ever grown on Si substrates with a III-V buffer.

Original language	American English
Pages	772-775
Number of pages	4
DOIs	https://doi.org/10.1109/WCPEC.2006.279570 https://doi.org/10.1109/WCPEC.2006.279570
State	Published - 2006
Event	2006 IEEE 4th World Conference on Photovoltaic Energy Conversion, WCPEC-4 - Waikoloa, HI, United States Duration: 7 May 2006 → 12 May 2006

Conference

Conference	2006 IEEE 4th World Conference on Photovoltaic Energy Conversion, WCPEC-4
Country/Territory	United States
City	Waikoloa, HI
Period	7/05/06 → 12/05/06

NREL Publication Number

NREL/CP-520-39846

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Cite this

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title = "Lattice-Mismatched GaAsP Solar Cells Grown on Silicon by OMVPE",

abstract = "We report on lattice-mismatched GaAs0.7P0.3 solar cells grown on silicon substrates. This composition of GaAs0.7P 0.3 has a band gap of about 1.7 eV and is well suited as the top junction of a III-V/Si two-junction tandem solar cell. Using a thin, high-quality GaP nucleation layer, a lattice-matched GaN0.02P 0.98 buffer layer, and a compositionally graded GaAs xP1-x buffer layer, the threading dislocation densities was reduced to less than 108 cm-2 in the active region. The efficiencies of these single-junction cells without any antireflection coatings were as high has 9.8% under the AM1.5G spectrum. The quality of these solar cells based on Voc is comparable to the best III-V solar cells ever grown on Si substrates with a III-V buffer.",

author = "Geisz, {J. F.} and Olson, {J. M.} and Romero, {M. J.} and Jiang, {C. S.} and Norman, {A. G.}",

year = "2006",

doi = "10.1109/WCPEC.2006.279570",

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pages = "772--775",

note = "2006 IEEE 4th World Conference on Photovoltaic Energy Conversion, WCPEC-4 ; Conference date: 07-05-2006 Through 12-05-2006",

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AU - Geisz, J. F.

AU - Olson, J. M.

AU - Romero, M. J.

AU - Jiang, C. S.

AU - Norman, A. G.

PY - 2006

Y1 - 2006

N2 - We report on lattice-mismatched GaAs0.7P0.3 solar cells grown on silicon substrates. This composition of GaAs0.7P 0.3 has a band gap of about 1.7 eV and is well suited as the top junction of a III-V/Si two-junction tandem solar cell. Using a thin, high-quality GaP nucleation layer, a lattice-matched GaN0.02P 0.98 buffer layer, and a compositionally graded GaAs xP1-x buffer layer, the threading dislocation densities was reduced to less than 108 cm-2 in the active region. The efficiencies of these single-junction cells without any antireflection coatings were as high has 9.8% under the AM1.5G spectrum. The quality of these solar cells based on Voc is comparable to the best III-V solar cells ever grown on Si substrates with a III-V buffer.

AB - We report on lattice-mismatched GaAs0.7P0.3 solar cells grown on silicon substrates. This composition of GaAs0.7P 0.3 has a band gap of about 1.7 eV and is well suited as the top junction of a III-V/Si two-junction tandem solar cell. Using a thin, high-quality GaP nucleation layer, a lattice-matched GaN0.02P 0.98 buffer layer, and a compositionally graded GaAs xP1-x buffer layer, the threading dislocation densities was reduced to less than 108 cm-2 in the active region. The efficiencies of these single-junction cells without any antireflection coatings were as high has 9.8% under the AM1.5G spectrum. The quality of these solar cells based on Voc is comparable to the best III-V solar cells ever grown on Si substrates with a III-V buffer.

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T2 - 2006 IEEE 4th World Conference on Photovoltaic Energy Conversion, WCPEC-4

Y2 - 7 May 2006 through 12 May 2006

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Lattice-Mismatched GaAsP Solar Cells Grown on Silicon by OMVPE

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