Lattice-Mismatched GaInP LED Devices and Methods of Fabricating Same

A method of fabricating an LED or the active regions of an LED and an LED. The method includes growing, depositing or otherwise providing a bottom cladding layer of a selected semiconductor alloy with an adjusted bandgap provided by intentionally disordering the structure of the cladding layer. A first active layer may be grown above the bottom cladding layer wherein the first active layer is fabricated of the same semiconductor alloy, with however, a partially ordered structure. The first active layer will also be fabricated to include a selected n or p type doping. The method further includes growing a second active layer above the first active layer where the second active layer s fabricated from the same semiconductor alloy.