Lattice-Mismatched GaInP LED Devices and Methods of Fabricating Same

Angelo Mascarenhas (Inventor), Myles Steiner (Inventor), Lekhnath Bhusal (Inventor), Yong Zhange (Inventor)

Research output: Patent


A method of fabricating an LED or the active regions of an LED and an LED. The method includes growing, depositing or otherwise providing a bottom cladding layer of a selected semiconductor alloy with an adjusted bandgap provided by intentionally disordering the structure of the cladding layer. A first active layer may be grown above the bottom cladding layer wherein the first active layer is fabricated of the same semiconductor alloy, with however, a partially ordered structure. The first active layer will also be fabricated to include a selected n or p type doping. The method further includes growing a second active layer above the first active layer where the second active layer s fabricated from the same semiconductor alloy.
Original languageAmerican English
Patent number8,866,146 B2
Filing date21/10/14
StatePublished - 2014

Bibliographical note

Assignee: Alliance for Sustainable Energy, LLC (Golden, CO)

NREL Publication Number

  • NREL/PT-5K00-64483


  • fabrication
  • LED
  • semiconductor alloys


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