Abstract
We report on one-step in situ codoped TiO2 thin films synthesized by cosputtering. The purpose of this acceptor-donor passivated codoping approach is to overcome the optoelectronic limitations that arise for monodoped TiO2 in photocatalytic applications. To evaluate these added benefits, the TiO2:WN thin films were characterized by different techniques. X-ray diffraction patterns and X-ray photoelectron spectral analysis revealed that both N and W dopants are mostly present in the desired substitutional locations. Additionally, the codoping approach was found to reduce the internal strain and defect density of the TiO2:WN films as compared to their monodoped TiO2:N counterparts. This defect reduction is confirmed via photocharge lifetime variation obtained using visible light flash photolysis time-resolved microwave conductivity measurements (FP-TRMC). Photocharge lifetime analysis indicated the presence of three distinct decay processes: charge trapping, recombination, and surface reactions. These characteristic lifetimes of the codoped TiO2:WN films (i.e., 0.08, 0.75, and 11.5 μs, respectively) were found to be about double those of their nitrogen monodoped TiO2:N counterparts (i.e., 0.03, 0.35, and 6.8 μs), quantitatively confirming the effective passivating outcome of the tungsten-nitrogen codoping approach developed here. The practicality of this method was confirmed by integrating the TiO2:WN films as photoanodes for the electro-photocatalytic, solar light driven degradation of a real pollutant (i.e., atrazine). A significant increase in the degradation kinetics, leading to a 4-fold increase in the pseudo-first-order degradation constant for the optimally doped TiO2:WN photoanodes (0.106 min-1) from the undoped TiO2-x ones (0.026 min-1), is a direct consequence of the increased photocharge lifetimes in tandem with visible light photosensitivity.
Original language | American English |
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Pages (from-to) | 5411-5419 |
Number of pages | 9 |
Journal | Journal of Physical Chemistry C |
Volume | 122 |
Issue number | 10 |
DOIs | |
State | Published - 2018 |
Bibliographical note
Publisher Copyright:© 2018 American Chemical Society.
NREL Publication Number
- NREL/JA-5K00-72060
Keywords
- doping
- optoelectronics
- sputtering
- thin films