Light-Emitting Porous Silicon from Cast Metallurgical-Grade Silicon

Pietro Menna, Y. S. Tsuo, M. M. Al-Jassim, S. E. Asher, F. J. Pern, T. F. Ciszek

Research output: Contribution to journalArticlepeer-review

1 Scopus Citations


Strong visible light emissions from porous silicon (PS) prepared from cast metallurgical-grade silicon (MG-Si) are reported for the first time. The Si substrates used for the preparation of the PS films were obtained by directional solidification casting of MG-Si, followed by wafer sawing and lapping. A chemical etching method was used instead of the conventional electrochemical method of producing PS. The photoluminescence spectra are characterized by a full width at half maximum of 340 to 370 meV, a 2.0 eV peak energy, and a strong peak intensity.

Original languageAmerican English
Pages (from-to)L115-L117
Number of pages3
JournalJournal of the Electrochemical Society
Issue number6
StatePublished - 1996

NREL Publication Number

  • ACNR/JA-412-16400


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