Abstract
Strong visible light emissions from porous silicon (PS) prepared from cast metallurgical-grade silicon (MG-Si) are reported for the first time. The Si substrates used for the preparation of the PS films were obtained by directional solidification casting of MG-Si, followed by wafer sawing and lapping. A chemical etching method was used instead of the conventional electrochemical method of producing PS. The photoluminescence spectra are characterized by a full width at half maximum of 340 to 370 meV, a 2.0 eV peak energy, and a strong peak intensity.
Original language | American English |
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Pages (from-to) | L115-L117 |
Number of pages | 3 |
Journal | Journal of the Electrochemical Society |
Volume | 143 |
Issue number | 6 |
DOIs | |
State | Published - 1996 |
NREL Publication Number
- ACNR/JA-412-16400