Light-Induced Degradation in Different p-i-n and n-i Schottky Barrier Solar Cell Structures

    Research output: Contribution to conferencePaper


    The issue of the lack of reliable correlation between the characteristics of high performance cells and their intrinsic material properties is addressed in this document. A systematic approach to the question of separating the effects of the bulk from those of the interface is described which is based on the selfconsistent analysis on a variety of both materials and solar cell properties in theannealed and degraded state. The results presented are on characteristics which include not only light I-V but also dark I-V and QE of p-i-n solar cells with different thicknesses as well as on n-i-metal Schottky barrier cell structures. These results are discussed in terms of how the contributions of the bulk i-layers can be established and quantified in the annealed as well as the degradedstates. An example is presented for such a quantitative correlation for a Schottky barrier cell structure in the annealed and degraded states.
    Original languageAmerican English
    Number of pages4
    StatePublished - 1996
    EventTwenty Fifth IEEE Photovoltaic Specialists Conference - Washington, D.C.
    Duration: 13 May 199617 May 1996


    ConferenceTwenty Fifth IEEE Photovoltaic Specialists Conference
    CityWashington, D.C.

    Bibliographical note

    Work performed by The Pennsylvania State University, University Park, Pennsylvania

    NREL Publication Number

    • NREL/CP-22511


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