Abstract
Light-induced effects are studied in hydrogenated amorphous silicon-sulfur alloys (a-SiSx:H) and compared to those that exist in a-Si:H. The a-SiSx:H films were grown by decomposition of pre-mixtures of SiH4 and H2S. The light-induced effects were monitored using electrical (dark conductivity and photoconductivity, including the constant photocurrent method [CPM]) and optical (photoluminescence)measurements and electron spin resonance. It is found that sulfur alloying results in a significant reduction in the degradation in the dark- and photo-conductivity. For an a-SiSx:H film grown with a gas mixture of H2S/SiH4 = 0.02, there is an increase of over an order of light soaking. The subgap deep defect density as measured by CPM increases with illumination time, following a stretchedexponential to saturation. The saturated defect density is an order of magnitude higher than that observed in the annealed state.
| Original language | American English |
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| Pages | 97-102 |
| Number of pages | 6 |
| State | Published - 1997 |
| Event | Amorphous and Microcrystalline Silicon Technology 1997: Materials Research Society Symposium - San Francisco, California Duration: 31 Mar 1997 → 4 Apr 1997 |
Conference
| Conference | Amorphous and Microcrystalline Silicon Technology 1997: Materials Research Society Symposium |
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| City | San Francisco, California |
| Period | 31/03/97 → 4/04/97 |
Bibliographical note
Work performed by University of Utah, Salt Lake City, Utah and College of Natural Sciences, Chunchon, KoreaNREL Publication Number
- NREL/CP-520-24544