Light-Induced Long-Range Hydrogen Motion in Hydrogenated Amorphous Silicon at Room Temperature

Hyeonsik M. Cheong, Se Hee Lee, Brent P. Nelson, Angelo Mascarenhas, Satyen K. Deb

Research output: Contribution to journalArticlepeer-review

17 Scopus Citations

Abstract

We present evidence for long-range hydrogen motion in hydrogenated amorphous silicon (a-Si:H) under room-temperature illumination, by monitoring the changes in the Raman spectrum of an a-WO3 overlayer with illumination. We observe that illumination causes hydrogen to diffuse out of the a-Si:H layer into the a-WO3 layer. This hydrogen motion is observed to saturate after about 30 min when the a-Si:H is illuminated with 15 W/cm3 of the 514.5 nm laser line at room temperature. The amount of hydrogen that diffuses out of the a-Si:H layer is estimated semiquantitatively to be approximately 9 × 10-4 at. %.

Original languageAmerican English
Pages (from-to)2686-2688
Number of pages3
JournalApplied Physics Letters
Volume77
Issue number17
DOIs
StatePublished - 2000

NREL Publication Number

  • NREL/JA-590-29548

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