Abstract
The present disclosure relates to a method that includes contacting a surface of a first layer that includes a Group III element and a Group V element with a gas that includes HCl, where the first layer is positioned in thermal contact with a wafer positioned in a chamber of a reactor, and the contacting results in a roughening of the surface.
Original language | American English |
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Patent number | 11,177,402 B2 |
Filing date | 16/11/21 |
State | Published - 2021 |
NREL Publication Number
- NREL/PT-5900-81508
Keywords
- Group III element
- Group V element
- phosphorus