Abstract
Light trapping plays an important role to achieve high short circuit current density (Jsc) and high efficiency for amorphous/crystalline Si heterojunction solar cells. Si heterojunction uses hydrogenated amorphous Si for emitter and back contact. This structure of solar cell posses highest open circuit voltage of 0.747 V at one sun for c-Si based solar cells. It also suggests that over 25%record-high efficiency is possible with further improvement of Jsc. Light trapping has two important tasks. The first one is to reduce the surface reflectance of light to zero for the solar spectrum that Si has a response. The second one is to increase the effective absorption length to capture all the photon. For Si heterojunction solar cell, surface texturing, anti-reflectance indium tinoxides (ITO) layer at the front and back are the key area to improve the light trapping.
| Original language | American English |
|---|---|
| Number of pages | 9 |
| State | Published - 2011 |
| Event | China Semiconductor Technology International Conference 2011 - Shanghai, China Duration: 13 Mar 2011 → 14 Mar 2011 |
Conference
| Conference | China Semiconductor Technology International Conference 2011 |
|---|---|
| City | Shanghai, China |
| Period | 13/03/11 → 14/03/11 |
NREL Publication Number
- NREL/CP-5200-51248
Keywords
- crystalline Si
- heterojunction
- hydrogenated amorphous silicon
- light trapping
- silicon
- solar cells