Abstract
The local built-in potential on grain boundaries of Cu(In,Ga)Se 2 (CIGS) films were measured using scanning Kelvin probe microscopy (SKPM). The local built-in potential that arose from the positively charged GB represented an energetic barrier, which attracted electrons and repelled holes from the grain boundary. This was found to benefit the three-dimensional collection of minority carriers. The GB effect on the photovoltaic performance was also studied.
Original language | American English |
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Pages (from-to) | 3477-3479 |
Number of pages | 3 |
Journal | Applied Physics Letters |
Volume | 84 |
Issue number | 18 |
DOIs | |
State | Published - 3 May 2004 |
NREL Publication Number
- NREL/JA-520-35437