Local Built-In Potential on Grain Boundary of Cu(In,Ga)Se2 Thin Films

C. S. Jiang, R. Noufi, J. A. AbuShama, K. Ramanathan, H. R. Moutinho, J. Pankow, M. M. Al-Jassim

Research output: Contribution to journalArticlepeer-review

187 Scopus Citations

Abstract

The local built-in potential on grain boundaries of Cu(In,Ga)Se 2 (CIGS) films were measured using scanning Kelvin probe microscopy (SKPM). The local built-in potential that arose from the positively charged GB represented an energetic barrier, which attracted electrons and repelled holes from the grain boundary. This was found to benefit the three-dimensional collection of minority carriers. The GB effect on the photovoltaic performance was also studied.

Original languageAmerican English
Pages (from-to)3477-3479
Number of pages3
JournalApplied Physics Letters
Volume84
Issue number18
DOIs
StatePublished - 3 May 2004

NREL Publication Number

  • NREL/JA-520-35437

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