Localization Behavior at Bound Bi Complex States in GaAs1-xBix

Kirstin Alberi, Theresa Christian, Brian Fluegel, Scott Crooker, Daniel Beaton, Angelo Mascarenhas

Research output: Contribution to journalArticlepeer-review

5 Scopus Citations


While bismuth-related states are known to localize carriers in GaAs1-xBix alloys, the localization behavior of distinct Bi pair, triplet, and cluster states bound above the valence band is less well understood. We probe localization at three different Bi complex states in dilute GaAs1-xBix alloys using magnetophotoluminescence and time-resolved photoluminescence spectroscopy. The mass of electrons Coulomb-bound to holes trapped at Bi pair states is found to increase relative to the average electron mass in the alloy. This increase is attributed to enhanced local compressive strain in the immediate vicinity of the pairs. The dependence of energy transfer between these states on composition is also explored.

Original languageAmerican English
Article number024605
Number of pages5
JournalPhysical Review Materials
Issue number2
StatePublished - 25 Jul 2017

Bibliographical note

Publisher Copyright:
© 2017 American Physical Society.

NREL Publication Number

  • NREL/JA-5K00-68789


  • isoelectronic impurity
  • localization


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