Localized Doping Using Silicon Ink Technology for High Efficiency Solar Cells

K. Alberi; G. Scardera; H. Moutinho; R. C. Reedy; M. J. Romero; E. Rogojina; M. Kelman; D. Poplavskyy; D. L. Young; F. Lemmi; H. Antoniadis

doi:10.1109/PVSC.2010.5614442

Localized Doping Using Silicon Ink Technology for High Efficiency Solar Cells

K. Alberi, G. Scardera, H. Moutinho, R. C. Reedy, M. J. Romero, E. Rogojina, M. Kelman, D. Poplavskyy, D. L. Young, F. Lemmi, H. Antoniadis

Research output: Contribution to conference › Paper › peer-review

9 Scopus Citations

Abstract

Controlled localized doping of selective emitter structures via Innovalight Silicon Ink technology is demonstrated. Both secondary ion mass spectrometry and scanning capacitance microscopy reveal abrupt lateral dopant profiles at ink-printed boundaries. Uniform doping of iso- and pyramidal surfaces is also verified using scanning electron microscopy dopant contrast imaging.

Original language	American English
Pages	1465-1468
Number of pages	4
DOIs	https://doi.org/10.1109/PVSC.2010.5614442 https://doi.org/10.1109/PVSC.2010.5614442
State	Published - 2010
Event	35th IEEE Photovoltaic Specialists Conference, PVSC 2010 - Honolulu, HI, United States Duration: 20 Jun 2010 → 25 Jun 2010

Conference

Conference	35th IEEE Photovoltaic Specialists Conference, PVSC 2010
Country/Territory	United States
City	Honolulu, HI
Period	20/06/10 → 25/06/10

NREL Publication Number

NREL/CP-520-48392

Keywords

silicon ink technology
solar cells

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Alberi, K., Scardera, G., Moutinho, H., Reedy, R. C., Romero, M. J., Rogojina, E., Kelman, M., Poplavskyy, D., Young, D. L., Lemmi, F., & Antoniadis, H. (2010). Localized Doping Using Silicon Ink Technology for High Efficiency Solar Cells. 1465-1468. Paper presented at 35th IEEE Photovoltaic Specialists Conference, PVSC 2010, Honolulu, HI, United States. https://doi.org/10.1109/PVSC.2010.5614442, https://doi.org/10.1109/PVSC.2010.5614442

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title = "Localized Doping Using Silicon Ink Technology for High Efficiency Solar Cells",

abstract = "Controlled localized doping of selective emitter structures via Innovalight Silicon Ink technology is demonstrated. Both secondary ion mass spectrometry and scanning capacitance microscopy reveal abrupt lateral dopant profiles at ink-printed boundaries. Uniform doping of iso- and pyramidal surfaces is also verified using scanning electron microscopy dopant contrast imaging.",

keywords = "silicon ink technology, solar cells",

author = "K. Alberi and G. Scardera and H. Moutinho and Reedy, {R. C.} and Romero, {M. J.} and E. Rogojina and M. Kelman and D. Poplavskyy and Young, {D. L.} and F. Lemmi and H. Antoniadis",

year = "2010",

doi = "10.1109/PVSC.2010.5614442",

language = "American English",

pages = "1465--1468",

note = "35th IEEE Photovoltaic Specialists Conference, PVSC 2010 ; Conference date: 20-06-2010 Through 25-06-2010",

}

Alberi, K, Scardera, G, Moutinho, H, Reedy, RC, Romero, MJ, Rogojina, E, Kelman, M, Poplavskyy, D, Young, DL, Lemmi, F & Antoniadis, H 2010, 'Localized Doping Using Silicon Ink Technology for High Efficiency Solar Cells', Paper presented at 35th IEEE Photovoltaic Specialists Conference, PVSC 2010, Honolulu, HI, United States, 20/06/10 - 25/06/10 pp. 1465-1468. https://doi.org/10.1109/PVSC.2010.5614442, https://doi.org/10.1109/PVSC.2010.5614442

TY - CONF

T1 - Localized Doping Using Silicon Ink Technology for High Efficiency Solar Cells

AU - Alberi, K.

AU - Scardera, G.

AU - Moutinho, H.

AU - Reedy, R. C.

AU - Romero, M. J.

AU - Rogojina, E.

AU - Kelman, M.

AU - Poplavskyy, D.

AU - Young, D. L.

AU - Lemmi, F.

AU - Antoniadis, H.

PY - 2010

Y1 - 2010

N2 - Controlled localized doping of selective emitter structures via Innovalight Silicon Ink technology is demonstrated. Both secondary ion mass spectrometry and scanning capacitance microscopy reveal abrupt lateral dopant profiles at ink-printed boundaries. Uniform doping of iso- and pyramidal surfaces is also verified using scanning electron microscopy dopant contrast imaging.

AB - Controlled localized doping of selective emitter structures via Innovalight Silicon Ink technology is demonstrated. Both secondary ion mass spectrometry and scanning capacitance microscopy reveal abrupt lateral dopant profiles at ink-printed boundaries. Uniform doping of iso- and pyramidal surfaces is also verified using scanning electron microscopy dopant contrast imaging.

KW - silicon ink technology

KW - solar cells

UR - http://www.scopus.com/inward/record.url?scp=78650149539&partnerID=8YFLogxK

U2 - 10.1109/PVSC.2010.5614442

DO - 10.1109/PVSC.2010.5614442

M3 - Paper

AN - SCOPUS:78650149539

SP - 1465

EP - 1468

T2 - 35th IEEE Photovoltaic Specialists Conference, PVSC 2010

Y2 - 20 June 2010 through 25 June 2010

ER -

Localized Doping Using Silicon Ink Technology for High Efficiency Solar Cells

Abstract

Conference

NREL Publication Number

Keywords

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