@misc{91aaca8c015e45b6a68429a1f339d460,
title = "Loss Analysis and Performance Optimization Pathways of 729-mV VocSi Solar Cells with Poly-Si on Locally-Etched Dielectric Passivating Contacts",
abstract = "In this article, the performance analysis of a 22.5% efficient polysilicon on silicon oxide (poly-Si/SiOx) passivated contact solar cells with deliberately introduced pinholes using metal-assisted chemical etching (MACE) has been performed with the help of optical analysis using Sunsolve and electrical analysis using Quokka3. The power loss is maximum due to recombination and resistive losses in the bulk (~0.76 mW/cm2 ) followed by power loss due to rear contact recombination (~0.35 mW/cm2 ). Recombination at the front surface also contributes to 0.24 mW/cm2. The effect of improving the bulk lifetime and lowering the recombination current density at the rear side on Voc, FF and efficiency has been investigated.",
keywords = "MACE, metal-assisted chemical etching, passivated contact, photovoltaics, pinhole, PLENO, PLEO, poly-Si on locally-etched SiNy/iOx, poly-Si on locally-etched SiOx, poly-Si/SiOx, PV, Quokka3, solar cell, Sunsolve",
author = "Suchismita Mitra and Caroline Anderson and Matthew Hartenstein and William Nemeth and Matthew Page and San Theingi and David Young and Sumit Agarwal and Paul Stradins",
year = "2023",
language = "American English",
series = "Presented at the 50th IEEE Photovoltaic Specialists Conference, 11-16 June 2023, San Juan, Puerto Rico",
type = "Other",
}