Low-Acceptor-Concentration GaInNAs Grown by Molecular-Beam Epitaxy for High-Current p-i-n Solar Cell Applications

A. J. Ptak; D. J. Friedman; Sarah Kurtz; R. C. Reedy

doi:10.1063/1.2113414

Low-Acceptor-Concentration GaInNAs Grown by Molecular-Beam Epitaxy for High-Current p-i-n Solar Cell Applications

A. J. Ptak, D. J. Friedman, Sarah Kurtz, R. C. Reedy

National Renewable Energy Laboratory

Research output: Contribution to journal › Article › peer-review

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Abstract

We report GaInNAs grown by solid-source molecular-beam epitaxy (MBE) with background acceptor concentrations less than 1014 cm-3, yielding depletion widths in excess of 3 μm. GaInNAs p-i-n solar cells fabricated from this low-acceptor-concentration material show greatly increased photocurrents and internal quantum efficiencies close to unity for band gaps as low as 1.15 eV. The low acceptor concentrations may be due to low levels of background impurities, such as hydrogen and carbon, in the MBE-grown layers. We discuss the dependence of the acceptor concentration on the substrate temperature used for GaInNAs growth.

Original language	American English
Article number	094501
Number of pages	5
Journal	Journal of Applied Physics
Volume	98
Issue number	9
DOIs	https://doi.org/10.1063/1.2113414 https://doi.org/10.1063/1.2113414
State	Published - 1 Nov 2005

NREL Publication Number

NREL/JA-520-37834

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@article{57418545ff0c4db08369fedeb808ee7c,

title = "Low-Acceptor-Concentration GaInNAs Grown by Molecular-Beam Epitaxy for High-Current p-i-n Solar Cell Applications",

abstract = "We report GaInNAs grown by solid-source molecular-beam epitaxy (MBE) with background acceptor concentrations less than 1014 cm-3, yielding depletion widths in excess of 3 μm. GaInNAs p-i-n solar cells fabricated from this low-acceptor-concentration material show greatly increased photocurrents and internal quantum efficiencies close to unity for band gaps as low as 1.15 eV. The low acceptor concentrations may be due to low levels of background impurities, such as hydrogen and carbon, in the MBE-grown layers. We discuss the dependence of the acceptor concentration on the substrate temperature used for GaInNAs growth.",

author = "Ptak, {A. J.} and Friedman, {D. J.} and Sarah Kurtz and Reedy, {R. C.}",

year = "2005",

month = nov,

day = "1",

doi = "10.1063/1.2113414",

language = "American English",

volume = "98",

journal = "Journal of Applied Physics",

issn = "0021-8979",

publisher = "American Institute of Physics",

number = "9",

}

TY - JOUR

T1 - Low-Acceptor-Concentration GaInNAs Grown by Molecular-Beam Epitaxy for High-Current p-i-n Solar Cell Applications

AU - Ptak, A. J.

AU - Friedman, D. J.

AU - Kurtz, Sarah

AU - Reedy, R. C.

PY - 2005/11/1

Y1 - 2005/11/1

N2 - We report GaInNAs grown by solid-source molecular-beam epitaxy (MBE) with background acceptor concentrations less than 1014 cm-3, yielding depletion widths in excess of 3 μm. GaInNAs p-i-n solar cells fabricated from this low-acceptor-concentration material show greatly increased photocurrents and internal quantum efficiencies close to unity for band gaps as low as 1.15 eV. The low acceptor concentrations may be due to low levels of background impurities, such as hydrogen and carbon, in the MBE-grown layers. We discuss the dependence of the acceptor concentration on the substrate temperature used for GaInNAs growth.

AB - We report GaInNAs grown by solid-source molecular-beam epitaxy (MBE) with background acceptor concentrations less than 1014 cm-3, yielding depletion widths in excess of 3 μm. GaInNAs p-i-n solar cells fabricated from this low-acceptor-concentration material show greatly increased photocurrents and internal quantum efficiencies close to unity for band gaps as low as 1.15 eV. The low acceptor concentrations may be due to low levels of background impurities, such as hydrogen and carbon, in the MBE-grown layers. We discuss the dependence of the acceptor concentration on the substrate temperature used for GaInNAs growth.

UR - http://www.scopus.com/inward/record.url?scp=27844535422&partnerID=8YFLogxK

U2 - 10.1063/1.2113414

DO - 10.1063/1.2113414

M3 - Article

AN - SCOPUS:27844535422

SN - 0021-8979

VL - 98

JO - Journal of Applied Physics

JF - Journal of Applied Physics

IS - 9

M1 - 094501

ER -

Low-Acceptor-Concentration GaInNAs Grown by Molecular-Beam Epitaxy for High-Current p-i-n Solar Cell Applications

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