Low-Band-Gap Ga0.5In0.5P Grown on (511)B GaAs Substrates

Sarah R. Kurtz; J. M. Olson; D. J. Arent; M. H. Bode; K. A. Bertness

doi:10.1063/1.355756

Low-Band-Gap Ga0.5In0.5P Grown on (511)B GaAs Substrates

Sarah R. Kurtz, J. M. Olson, D. J. Arent, M. H. Bode, K. A. Bertness

National Renewable Energy Laboratory

Research output: Contribution to journal › Article › peer-review

21 Scopus Citations

Abstract

The band gap and microstructure of Ga_0.5In_0.5P have been shown to vary with deposition conditions. However, growth on (511)B GaAs substrates has been reported to give Ga_0.5In_0.5P with band gaps close to that of disordered material. It is shown here, that with appropriate selection of the growth parameters, Ga_0.5In _0.5P can be grown with low band gap and significant ordering on even the (511)B substrates, implying that surface steps play an important role in the ordering process. For the lattice-matched composition, a band gap of 1.83 eV was obtained using low growth temperature (575°C), low growth rate (0.55 μm/h), and high phosphine pressure (5 Torr).

Original language	American English
Pages (from-to)	5110-5113
Number of pages	4
Journal	Journal of Applied Physics
Volume	75
Issue number	10
DOIs	https://doi.org/10.1063/1.355756 https://doi.org/10.1063/1.355756
State	Published - 1994

NREL Publication Number

NREL/JA-451-5839

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title = "Low-Band-Gap Ga0.5In0.5P Grown on (511)B GaAs Substrates",

abstract = "The band gap and microstructure of Ga0.5In0.5P have been shown to vary with deposition conditions. However, growth on (511)B GaAs substrates has been reported to give Ga0.5In0.5P with band gaps close to that of disordered material. It is shown here, that with appropriate selection of the growth parameters, Ga0.5In 0.5P can be grown with low band gap and significant ordering on even the (511)B substrates, implying that surface steps play an important role in the ordering process. For the lattice-matched composition, a band gap of 1.83 eV was obtained using low growth temperature (575°C), low growth rate (0.55 μm/h), and high phosphine pressure (5 Torr).",

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T1 - Low-Band-Gap Ga0.5In0.5P Grown on (511)B GaAs Substrates

AU - Kurtz, Sarah R.

AU - Olson, J. M.

AU - Arent, D. J.

AU - Bode, M. H.

AU - Bertness, K. A.

PY - 1994

Y1 - 1994

N2 - The band gap and microstructure of Ga0.5In0.5P have been shown to vary with deposition conditions. However, growth on (511)B GaAs substrates has been reported to give Ga0.5In0.5P with band gaps close to that of disordered material. It is shown here, that with appropriate selection of the growth parameters, Ga0.5In 0.5P can be grown with low band gap and significant ordering on even the (511)B substrates, implying that surface steps play an important role in the ordering process. For the lattice-matched composition, a band gap of 1.83 eV was obtained using low growth temperature (575°C), low growth rate (0.55 μm/h), and high phosphine pressure (5 Torr).

AB - The band gap and microstructure of Ga0.5In0.5P have been shown to vary with deposition conditions. However, growth on (511)B GaAs substrates has been reported to give Ga0.5In0.5P with band gaps close to that of disordered material. It is shown here, that with appropriate selection of the growth parameters, Ga0.5In 0.5P can be grown with low band gap and significant ordering on even the (511)B substrates, implying that surface steps play an important role in the ordering process. For the lattice-matched composition, a band gap of 1.83 eV was obtained using low growth temperature (575°C), low growth rate (0.55 μm/h), and high phosphine pressure (5 Torr).

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Low-Band-Gap Ga0.5In0.5P Grown on (511)B GaAs Substrates

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