Low-Band-Gap Ga0.5In0.5P Grown on (511)B GaAs Substrates

Sarah R. Kurtz, J. M. Olson, D. J. Arent, M. H. Bode, K. A. Bertness

Research output: Contribution to journalArticlepeer-review

21 Scopus Citations


The band gap and microstructure of Ga0.5In0.5P have been shown to vary with deposition conditions. However, growth on (511)B GaAs substrates has been reported to give Ga0.5In0.5P with band gaps close to that of disordered material. It is shown here, that with appropriate selection of the growth parameters, Ga0.5In 0.5P can be grown with low band gap and significant ordering on even the (511)B substrates, implying that surface steps play an important role in the ordering process. For the lattice-matched composition, a band gap of 1.83 eV was obtained using low growth temperature (575°C), low growth rate (0.55 μm/h), and high phosphine pressure (5 Torr).

Original languageAmerican English
Pages (from-to)5110-5113
Number of pages4
JournalJournal of Applied Physics
Issue number10
StatePublished - 1994

NREL Publication Number

  • NREL/JA-451-5839


Dive into the research topics of 'Low-Band-Gap Ga0.5In0.5P Grown on (511)B GaAs Substrates'. Together they form a unique fingerprint.

Cite this