Low-Bandgap, Monolithic, Multi-Bandgap, Optoelectronic Devices

Jeffrey Carapella (Inventor), Mark Wanlass (Inventor)

Research output: Patent


Low bandgap, monolithic, multi-bandgap, optoelectronic devices (10), including PV converters, photodetectors, and LED's, have lattice-matched (LM), double-heterostructure (DH), low-bandgap GaInAs(P) subcells (22, 24) including those that are lattice-mismatched (LMM) to InP, grown on an InP substrate (26) by use of at least one graded lattice constant transition layer (20) of InAsP positionedsomewhere between the InP substrate (26) and the LMM subcell(s) (22, 24). These devices are monofacial (10) or bifacial (80) and include monolithic, integrated, modules (MIMs) (190) with a plurality of voltage-matched subcell circuits (262, 264, 266, 270, 272) as well as other variations and embodiments.
Original languageAmerican English
Patent number8,772,623
Filing date8/07/14
StatePublished - 2014

Bibliographical note

Assignee: Alliance for Sustainable Energy, LLC (Golden, CO)

NREL Publication Number

  • NREL/PT-5K00-62983


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