Low-Cost III-V Solar Cells Grown by Hydride Vapor-Phase Epitaxy

John Simon; David Young; Aaron Ptak

doi:10.1109/PVSC.2014.6924977

Low-Cost III-V Solar Cells Grown by Hydride Vapor-Phase Epitaxy

John Simon, David Young, Aaron Ptak

Chemistry and Nanoscience

Research output: Contribution to conference › Paper › peer-review

29 Scopus Citations

Abstract

The high epitaxial cost of high-efficiency III-V photovoltaic devices has limited these cells to niche markets. In this work, we demonstrate hydride vapor-phase epitaxy (HVPE) growth of III-V materials as a low-cost, high-throughput alternative to conventional metal-organic vapor-phase epitaxy (MOVPE). A brand new, custom-built HVPE reactor was used to obtain high-quality GaAs films at growth rates as high as 1.5 μm/min (90 μm/h). Near-ideal Hall mobilities for both n- and p-type carriers are demonstrated. Preliminary GaAs p-n junctions with unpassivated surfaces show significant rectifying behavior and excellent carrier collection, open-circuit voltage as high as 0.95 V, and fill factors of 86% under AM1.5G illumination. These results show the viability of HVPE for the growth of high-quality III-V devices at significantly lower costs.

Original language	American English
Pages	538-541
Number of pages	4
DOIs	https://doi.org/10.1109/PVSC.2014.6924977 https://doi.org/10.1109/PVSC.2014.6924977
State	Published - 15 Oct 2014
Event	40th IEEE Photovoltaic Specialist Conference, PVSC 2014 - Denver, United States Duration: 8 Jun 2014 → 13 Jun 2014

Conference

Conference	40th IEEE Photovoltaic Specialist Conference, PVSC 2014
Country/Territory	United States
City	Denver
Period	8/06/14 → 13/06/14

Bibliographical note

Publisher Copyright:
© 2014 IEEE.

NREL Publication Number

NREL/CP-5J00-61915

Keywords

gallium arsenide
HVPE
photovoltaics

UN SDGs

This output contributes to the following UN Sustainable Development Goals (SDGs)

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Cite this

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title = "Low-Cost III-V Solar Cells Grown by Hydride Vapor-Phase Epitaxy",

abstract = "The high epitaxial cost of high-efficiency III-V photovoltaic devices has limited these cells to niche markets. In this work, we demonstrate hydride vapor-phase epitaxy (HVPE) growth of III-V materials as a low-cost, high-throughput alternative to conventional metal-organic vapor-phase epitaxy (MOVPE). A brand new, custom-built HVPE reactor was used to obtain high-quality GaAs films at growth rates as high as 1.5 μm/min (90 μm/h). Near-ideal Hall mobilities for both n- and p-type carriers are demonstrated. Preliminary GaAs p-n junctions with unpassivated surfaces show significant rectifying behavior and excellent carrier collection, open-circuit voltage as high as 0.95 V, and fill factors of 86% under AM1.5G illumination. These results show the viability of HVPE for the growth of high-quality III-V devices at significantly lower costs.",

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N2 - The high epitaxial cost of high-efficiency III-V photovoltaic devices has limited these cells to niche markets. In this work, we demonstrate hydride vapor-phase epitaxy (HVPE) growth of III-V materials as a low-cost, high-throughput alternative to conventional metal-organic vapor-phase epitaxy (MOVPE). A brand new, custom-built HVPE reactor was used to obtain high-quality GaAs films at growth rates as high as 1.5 μm/min (90 μm/h). Near-ideal Hall mobilities for both n- and p-type carriers are demonstrated. Preliminary GaAs p-n junctions with unpassivated surfaces show significant rectifying behavior and excellent carrier collection, open-circuit voltage as high as 0.95 V, and fill factors of 86% under AM1.5G illumination. These results show the viability of HVPE for the growth of high-quality III-V devices at significantly lower costs.

AB - The high epitaxial cost of high-efficiency III-V photovoltaic devices has limited these cells to niche markets. In this work, we demonstrate hydride vapor-phase epitaxy (HVPE) growth of III-V materials as a low-cost, high-throughput alternative to conventional metal-organic vapor-phase epitaxy (MOVPE). A brand new, custom-built HVPE reactor was used to obtain high-quality GaAs films at growth rates as high as 1.5 μm/min (90 μm/h). Near-ideal Hall mobilities for both n- and p-type carriers are demonstrated. Preliminary GaAs p-n junctions with unpassivated surfaces show significant rectifying behavior and excellent carrier collection, open-circuit voltage as high as 0.95 V, and fill factors of 86% under AM1.5G illumination. These results show the viability of HVPE for the growth of high-quality III-V devices at significantly lower costs.

KW - gallium arsenide

KW - HVPE

KW - photovoltaics

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Low-Cost III-V Solar Cells Grown by Hydride Vapor-Phase Epitaxy

Abstract

Conference

Bibliographical note

NREL Publication Number

Keywords

UN SDGs

Access to Document

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