Low-Cost III-V Solar Cells Grown by Hydride Vapor-Phase Epitaxy

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29 Scopus Citations


The high epitaxial cost of high-efficiency III-V photovoltaic devices has limited these cells to niche markets. In this work, we demonstrate hydride vapor-phase epitaxy (HVPE) growth of III-V materials as a low-cost, high-throughput alternative to conventional metal-organic vapor-phase epitaxy (MOVPE). A brand new, custom-built HVPE reactor was used to obtain high-quality GaAs films at growth rates as high as 1.5 μm/min (90 μm/h). Near-ideal Hall mobilities for both n- and p-type carriers are demonstrated. Preliminary GaAs p-n junctions with unpassivated surfaces show significant rectifying behavior and excellent carrier collection, open-circuit voltage as high as 0.95 V, and fill factors of 86% under AM1.5G illumination. These results show the viability of HVPE for the growth of high-quality III-V devices at significantly lower costs.

Original languageAmerican English
Number of pages4
StatePublished - 15 Oct 2014
Event40th IEEE Photovoltaic Specialist Conference, PVSC 2014 - Denver, United States
Duration: 8 Jun 201413 Jun 2014


Conference40th IEEE Photovoltaic Specialist Conference, PVSC 2014
Country/TerritoryUnited States

Bibliographical note

Publisher Copyright:
© 2014 IEEE.

NREL Publication Number

  • NREL/CP-5J00-61915


  • gallium arsenide
  • HVPE
  • photovoltaics


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