Low-Defect Heteroepitaxy on Porous Si Substrates: Cooperative Research and Development Final Report, CRADA Number CRD-13-534

In this collaboration, NREL will grow Ge, SiGe, and III-V layers on porous Si (pSi) substrates prepared either by Crystal Solar or at NREL. The intent is to grow low-defect epitaxial III-V alloys using the porous Si layer to prevent defect formation. Finally, we aim to fabricate solar cells from the III-V layers to prove the electronic quality.