Low-Power Deposition of Fluorinated Microcrystalline Silicon Hydrogen Alloy Films

Swati Ray; S. C. De; Gautam Ganguly; A. K. Barua; A. J. Mascarenhas; M. M. Al-Jassim; S. K. Deb

doi:10.1063/1.343432

Low-Power Deposition of Fluorinated Microcrystalline Silicon Hydrogen Alloy Films

Swati Ray
, S. C. De
, Gautam Ganguly
, A. K. Barua
, A. J. Mascarenhas
, M. M. Al-Jassim
, S. K. Deb

Materials Science

Research output: Contribution to journal › Article › peer-review

7 Scopus Citations

Abstract

Fluorinated microcrystalline silicon hydrogen alloy films have been prepared by the radio frequency glow-discharge decomposition of silicon tetrafluoride/hydrogen mixtures. Thereby, μc-Si:F:H films with high dark conductivity (∼10^-3 Ω^-1 cm^-1), high photoconductivity (∼10^- ⁴ Ω^-1 cm^-1), showing crystalline structure in selected-area transmission electron microscope diffraction patterns as well as sharp infrared absorption and Raman shift spectra have been obtained under conditions of low-power density (∼0.15 W cm^-2) and hydrogen dilution (∼20%).

Original language	American English
Pages (from-to)	4024-4027
Number of pages	4
Journal	Journal of Applied Physics
Volume	65
Issue number	10
DOIs	https://doi.org/10.1063/1.343432 https://doi.org/10.1063/1.343432
State	Published - 1989

Bibliographical note

Work performed by Solar Energy Research Institute, Golden, Colorado, and Energy Research Unit, Indian Association for the Cultivation of Science, Calcutta, India

NLR Publication Number

ACNR/JA-212-11343

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@article{52b7e5b6059c490a9ca3070714dff2f2,

title = "Low-Power Deposition of Fluorinated Microcrystalline Silicon Hydrogen Alloy Films",

abstract = "Fluorinated microcrystalline silicon hydrogen alloy films have been prepared by the radio frequency glow-discharge decomposition of silicon tetrafluoride/hydrogen mixtures. Thereby, μc-Si:F:H films with high dark conductivity (∼10-3 Ω-1 cm-1), high photoconductivity (∼10- 4 Ω-1 cm-1), showing crystalline structure in selected-area transmission electron microscope diffraction patterns as well as sharp infrared absorption and Raman shift spectra have been obtained under conditions of low-power density (∼0.15 W cm-2) and hydrogen dilution (∼20\%).",

author = "Swati Ray and De, \{S. C.\} and Gautam Ganguly and Barua, \{A. K.\} and Mascarenhas, \{A. J.\} and Al-Jassim, \{M. M.\} and Deb, \{S. K.\}",

note = "Work performed by Solar Energy Research Institute, Golden, Colorado, and Energy Research Unit, Indian Association for the Cultivation of Science, Calcutta, India",

year = "1989",

doi = "10.1063/1.343432",

language = "American English",

volume = "65",

pages = "4024--4027",

journal = "Journal of Applied Physics",

issn = "0021-8979",

publisher = "American Institute of Physics",

number = "10",

}

TY - JOUR

T1 - Low-Power Deposition of Fluorinated Microcrystalline Silicon Hydrogen Alloy Films

AU - Ray, Swati

AU - De, S. C.

AU - Ganguly, Gautam

AU - Barua, A. K.

AU - Mascarenhas, A. J.

AU - Al-Jassim, M. M.

AU - Deb, S. K.

N1 - Work performed by Solar Energy Research Institute, Golden, Colorado, and Energy Research Unit, Indian Association for the Cultivation of Science, Calcutta, India

PY - 1989

Y1 - 1989

N2 - Fluorinated microcrystalline silicon hydrogen alloy films have been prepared by the radio frequency glow-discharge decomposition of silicon tetrafluoride/hydrogen mixtures. Thereby, μc-Si:F:H films with high dark conductivity (∼10-3 Ω-1 cm-1), high photoconductivity (∼10- 4 Ω-1 cm-1), showing crystalline structure in selected-area transmission electron microscope diffraction patterns as well as sharp infrared absorption and Raman shift spectra have been obtained under conditions of low-power density (∼0.15 W cm-2) and hydrogen dilution (∼20%).

AB - Fluorinated microcrystalline silicon hydrogen alloy films have been prepared by the radio frequency glow-discharge decomposition of silicon tetrafluoride/hydrogen mixtures. Thereby, μc-Si:F:H films with high dark conductivity (∼10-3 Ω-1 cm-1), high photoconductivity (∼10- 4 Ω-1 cm-1), showing crystalline structure in selected-area transmission electron microscope diffraction patterns as well as sharp infrared absorption and Raman shift spectra have been obtained under conditions of low-power density (∼0.15 W cm-2) and hydrogen dilution (∼20%).

UR - https://www.scopus.com/pages/publications/0000115353

U2 - 10.1063/1.343432

DO - 10.1063/1.343432

M3 - Article

AN - SCOPUS:0000115353

SN - 0021-8979

VL - 65

SP - 4024

EP - 4027

JO - Journal of Applied Physics

JF - Journal of Applied Physics

IS - 10

ER -

Low-Power Deposition of Fluorinated Microcrystalline Silicon Hydrogen Alloy Films

Abstract

Bibliographical note

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