Low-Temperature Birefringence in Ordered GaInP Alloy Studied by Polarized Transmission Spectroscopy

Yong Zhang; B. Fluegel; A. Mascarenhas; J. F. Geisz; J. M. Olson; F. Alsina; A. Duda

doi:10.1016/S0038-1098(97)00392-X

Low-Temperature Birefringence in Ordered GaInP Alloy Studied by Polarized Transmission Spectroscopy

Yong Zhang, B. Fluegel, A. Mascarenhas, J. F. Geisz, J. M. Olson, F. Alsina, A. Duda

Chemistry and Nanoscience

National Renewable Energy Laboratory

Research output: Contribution to journal › Article › peer-review

6 Scopus Citations

Abstract

The low-temperature birefringence of spontaneously ordered GaInP is studied by using polarized transmission spectroscopy at 5 K. Refractive indexes n_o, n_e and the birefringence Δn_oe = n_o - n_e are obtained by applying two independent techniques: (1) measuring the polarized transmission spectra with polarization parallel to each of the two cleaved edges individually; and (2) measuring one transmission spectrum with a cross-polarization configuration. The results of these two techniques are consistent, and both give Δn_oe, ∼ 0.02 near the band-gap of partially ordered GaInP. Exact and approximate formulae have been derived for analyzing the cross-polarization spectrum. A possible device-polarization rotator-is proposed based on the in-plane birefringence.

Original language	American English
Pages (from-to)	577-580
Number of pages	4
Journal	Solid State Communications
Volume	104
Issue number	10
DOIs	https://doi.org/10.1016/S0038-1098(97)00392-X
State	Published - Dec 1997

NREL Publication Number

NREL/JA-520-24508

Keywords

A. Semiconductors
C. Crystal structure and symmetry
D. Optical properties
D. Order-disorder effects

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10.1016/S0038-1098(97)00392-X

Cite this

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title = "Low-Temperature Birefringence in Ordered GaInP Alloy Studied by Polarized Transmission Spectroscopy",

abstract = "The low-temperature birefringence of spontaneously ordered GaInP is studied by using polarized transmission spectroscopy at 5 K. Refractive indexes no, ne and the birefringence Δnoe = no - ne are obtained by applying two independent techniques: (1) measuring the polarized transmission spectra with polarization parallel to each of the two cleaved edges individually; and (2) measuring one transmission spectrum with a cross-polarization configuration. The results of these two techniques are consistent, and both give Δnoe, ∼ 0.02 near the band-gap of partially ordered GaInP. Exact and approximate formulae have been derived for analyzing the cross-polarization spectrum. A possible device-polarization rotator-is proposed based on the in-plane birefringence.",

keywords = "A. Semiconductors, C. Crystal structure and symmetry, D. Optical properties, D. Order-disorder effects",

author = "Yong Zhang and B. Fluegel and A. Mascarenhas and Geisz, {J. F.} and Olson, {J. M.} and F. Alsina and A. Duda",

year = "1997",

month = dec,

doi = "10.1016/S0038-1098(97)00392-X",

language = "American English",

volume = "104",

pages = "577--580",

journal = "Solid State Communications",

issn = "0038-1098",

publisher = "Elsevier Ltd.",

number = "10",

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TY - JOUR

T1 - Low-Temperature Birefringence in Ordered GaInP Alloy Studied by Polarized Transmission Spectroscopy

AU - Zhang, Yong

AU - Fluegel, B.

AU - Mascarenhas, A.

AU - Geisz, J. F.

AU - Olson, J. M.

AU - Alsina, F.

AU - Duda, A.

PY - 1997/12

Y1 - 1997/12

N2 - The low-temperature birefringence of spontaneously ordered GaInP is studied by using polarized transmission spectroscopy at 5 K. Refractive indexes no, ne and the birefringence Δnoe = no - ne are obtained by applying two independent techniques: (1) measuring the polarized transmission spectra with polarization parallel to each of the two cleaved edges individually; and (2) measuring one transmission spectrum with a cross-polarization configuration. The results of these two techniques are consistent, and both give Δnoe, ∼ 0.02 near the band-gap of partially ordered GaInP. Exact and approximate formulae have been derived for analyzing the cross-polarization spectrum. A possible device-polarization rotator-is proposed based on the in-plane birefringence.

AB - The low-temperature birefringence of spontaneously ordered GaInP is studied by using polarized transmission spectroscopy at 5 K. Refractive indexes no, ne and the birefringence Δnoe = no - ne are obtained by applying two independent techniques: (1) measuring the polarized transmission spectra with polarization parallel to each of the two cleaved edges individually; and (2) measuring one transmission spectrum with a cross-polarization configuration. The results of these two techniques are consistent, and both give Δnoe, ∼ 0.02 near the band-gap of partially ordered GaInP. Exact and approximate formulae have been derived for analyzing the cross-polarization spectrum. A possible device-polarization rotator-is proposed based on the in-plane birefringence.

KW - A. Semiconductors

KW - C. Crystal structure and symmetry

KW - D. Optical properties

KW - D. Order-disorder effects

UR - http://www.scopus.com/inward/record.url?scp=0040683510&partnerID=8YFLogxK

U2 - 10.1016/S0038-1098(97)00392-X

DO - 10.1016/S0038-1098(97)00392-X

M3 - Article

AN - SCOPUS:0040683510

SN - 0038-1098

VL - 104

SP - 577

EP - 580

JO - Solid State Communications

JF - Solid State Communications

IS - 10

ER -

Low-Temperature Birefringence in Ordered GaInP Alloy Studied by Polarized Transmission Spectroscopy

Abstract

NREL Publication Number

Keywords

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